A Lateral Power MOSFET With the Double Extended Trench Gate

A novel power LDMOSFET structure with high breakdown voltage

“…The breakdown voltage of P-LDMOSFET and C-LDMOSFET are 161V and 46V, respectively. The reason why breakdown voltage is enhanced because electric field is lowered under the influence of n-drift and p-substrate RESURF effect [3]. The electrical performances of C-and P-LDMOSFET are shown in Table 1.…”

“…The field oxide decreases the lateral electric field due to low permittivity. Reduced Surface Field (RESURF) effect on N-drift/Psubstrate achieves high breakdown voltage [3].…”

A Review on Power MOSFET Device Structures

“…An inverted L-shaped source trench power MOSFET reduces the 30% R on [15]. A lateral power MOSFET in which the double extended trench gate is formed [16] gives 36% and 64% improvement in V b and R on . In this additional charges are introduced into the drift region and the substrate, which optimizes the distribution of electric field in the device.…”

A vertical power MOSFET with the extended trench oxide

“…The overall structure maintains the GOB structure for the uniform electric field distribution in the drift region [1] and GE-UMOS structure, which has additional deep trench polysilicon electrode [2], for the electron current density. However, deep trench polysilicon electrode causes a higher electric field crowding at the corner of the side wall oxide, which results in the premature breakdown at this location [4]. To solve this problem, the structure of ETO MOSFET introduces a different structural characteristic from the GE-UMOS structure.…”

“…The side wall oxide depth of the conventional structure such as GOB structure and GE-UMOSFET is 0. With the depth of the side wall oxide decreasing, there is an optimum depth [4], which can distribute the horizontal electric field and potential contour most uniformly. The performance of proposed ETO MOSFET is shown in Figure 3.…”