A Laser‐Processed Silicon Solar Cell with Photovoltaic Efficiency in the Infrared

Sánchez, María Isabel Gómez; Delaporte, Philippe; Spiegel, Yohann; Franta, Benjamin; Mazur, Eric; Sarnet, T.

doi:10.1002/pssa.202000550

Cited by 19 publications

(10 citation statements)

References 57 publications

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“…Similarly, for solar cell application, Sánchez et al showed the highest absorptance in broadband wavelengths (400–2500 nm) with a laser fluence of 5 kJ m −2 , which resulted in increased photovoltaic efficiency due to extra gain from intermediate states in NIR. [ 13 ] Although the tailored optical and electrical properties in our experiment are obtained in the absence of high sub‐band gap absorption, the optimal laser fluence obtained in our work may also be applicable to fs‐bSi after hyperdoping. In conclusion, the similar fluence used in different work suggests that the laser fluence is a key parameter to achieve high performance devices despite doping or post processing.…”

Section: Resultsmentioning

confidence: 96%

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Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Liu

Radfar

Chen

et al. 2022

Advanced Photonics Research

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The femtosecond‐pulsed laser processed black silicon (fs‐bSi) features high absorptance in a wide spectral range but suffers from high amount of laser induced damage as compared with bSi fabricated by other methods. Here, the aim is to minimize the charge carrier recombination in the fs‐bSi caused by laser damage as indicated by the sub‐bandgap absorption and as quantified by the carrier lifetime, while maintaining high absorption in the above bandgap. The effect of the laser parameters, including the focal position, the average power, and the scan speed are systematically studied by characterizing the surface morphology, the absorptance spectra, and the minority‐carrier recombination lifetime. For the surface passivation of fs‐bSi, the well‐established atomic layer deposited (ALD) Al2O3 is used. The results show that with the tailored laser parameters, high average absorptance of about 96% in the visible range and minority carrier lifetime of 54 μs at the injection level of Δn = 1 · 1015 cm−3 can be obtained simultaneously. This work paves the way toward high‐performance broadband optoelectronic devices based on surface passivated fs‐bSi.

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Section: Resultsmentioning

confidence: 96%

“…[ 10,11 ] Thus, the fs‐bSi has a high promise in applications that benefit from broadband responsivity extending from UV to IR such as photodetectors and solar cells. [ 12,13 ]…”

Section: Introductionmentioning

confidence: 99%

Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Liu

Radfar

Chen

et al. 2022

Advanced Photonics Research

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“…Based on the results of the reflectivity and the dielectric function, we can deduce that a femtosecond laser can perform an ultrafast optical change while the Ge thin film is still cold, offering new possibilities for a wide range of Ge applications at both the micro- and nano-scale, in the same way that other semiconductors are utilized currently. For instance, direct femtosecond laser writing applied to Si [ 35 , 36 ], diamond [ 37 , 38 , 39 ], and SiC [ 40 , 41 ] has indeed been shown to significantly increase the photon absorption of the materials in the solar spectrum, allowing for the fabrication of innovative high-performance solar cells [ 42 , 43 , 44 ].…”

Section: Resultsmentioning

confidence: 99%

Optical and Thermal Behavior of Germanium Thin Films under Femtosecond Laser Irradiation

et al. 2022

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In this study, we theoretically investigate the response of a germanium thin film under femtosecond pulsed laser irradiation. Electron and lattice temperatures, as well as material-specific optical properties such as dielectric function and reflectivity, were calculated during the irradiation using an extended two-temperature model coupled with the carrier density rate equation and the Drude model. Melting and ablation fluence thresholds were also predicted, resulting in 0.14 J cm−2 and 0.35 J cm−2, respectively. An ultrafast change in both optical and thermal properties was detected upon laser irradiation. Results also indicate that thermal melting occurs after germanium takes on a metallic character during irradiation, and that the impact ionization process may have a critical role in the laser-induced thermal effect. Therefore, we suggest that the origin of the thermal modification of germanium surface under femtosecond laser irradiation is mostly due the impact ionization process and that its effect becomes more important when increasing the laser fluence.

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“…Hyperdoped systems achieved using this doping method more often use fs-lasers. The dopants investigated included S, Se, Te, Cr, and Mo [1,7,38,[62][63][64][65][66][67][68][69]. There are differences in the laser-matter interaction with different phases of the dopant precursor (gaseous or solid, particularly when multiple laser pulses and scanning are employed) [70].…”

Section: Thin-film or Gas Phase Dopant Precursormentioning

confidence: 99%

Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors

Sher¹,

García-Hemme²

2023

Semicond. Sci. Technol.

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Hyperdoping silicon, which introduces deep-level dopants into Si at concentrations near one atomic percent, drastically changes its optoelectronic properties. We review recent progress in the fundamental understanding of the material properties and state of the art sub-bandgap infrared photodetectors. Different hyperdoping techniques are reviewed and compared, namely ion implantation followed by pulsed laser melting or other fast annealing methods and pulsed laser melting of Si with a dopant precursor. We review data available in the literature for material properties related to the success of optoelectronic devices such as the charge carrier lifetime, mobility, and sub-bandgap light absorption of hyperdoped Si with different dopants. To maximize carrier generation and collection efficiency in a sub-bandgap photodetector, charge carrier lifetimes must be long enough to be transported through the hyperdoped layer, which should be on the order of light absorption depth. Lastly, the charge transport properties and photodetector responsivities of hyperdoped Si based photodiodes at room temperature and at cryogenic temperatures are compared. The charge carrier transport mechanisms at different temperature ranges and in different dopant systems are discussed. At room temperature, despite different dopant energetics and hyperdoped thicknesses, light detection exhibits similar spectral responsivities with a common cutoff around 0.5 eV, and at low temperatures, it extends further into the infrared range. The roles of the dopant energetics and process-induced defects are discussed. We highlight future material development directions for enhancing device performance.

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A Laser‐Processed Silicon Solar Cell with Photovoltaic Efficiency in the Infrared

Cited by 19 publications

References 57 publications

Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Optical and Thermal Behavior of Germanium Thin Films under Femtosecond Laser Irradiation

Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors

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