1999
DOI: 10.1109/22.808984
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A large-signal model of self-aligned gate GaAs FET's for high-efficiency power-amplifier design

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Cited by 3 publications
(1 citation statement)
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“…The drain conductance frequency dispersion is explained by the electron trapping effect of deep levels in the substrate corresponding to the input signals. The value of resistance R cf is given by the formula [] Rcf=2Rcf0tanhBfrVGS0Urc+1where R cf0 , U rc , and B rf are fitting parameters.…”
Section: The Model Formmentioning
confidence: 99%
“…The drain conductance frequency dispersion is explained by the electron trapping effect of deep levels in the substrate corresponding to the input signals. The value of resistance R cf is given by the formula [] Rcf=2Rcf0tanhBfrVGS0Urc+1where R cf0 , U rc , and B rf are fitting parameters.…”
Section: The Model Formmentioning
confidence: 99%