A large plasma source using a slotted antenna for the TFT-LCD manufacturing process

Takagi, Shigeyuki; Aoki, Katsuaki; Shimizu, Tsutomu; Yamauchi, Takeshi; Taki, Kazunari; Shinmura, Tadashi

doi:10.1109/plasma.1998.677547

Cited by 1 publication

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“…It consists of a discharge region and a reaction chamber in which TFT-LCD substrates are etched and ashed. 15) The discharge region has two plasma sources, which consist of waveguides, slot antennas, and dielectric windows. The plasma sources are connected through a support portion (beam).…”

Section: Experimental Apparatus and Resultsmentioning

confidence: 99%

“…The configuration of each slot antenna (position, length, width) was optimized so that plasma could be generated uniformly and stably. 15,16) Two slot antennas with a fivestep-stair shape, where the length of each step corresponds to half of the wavelength, were located in parallel along the waveguide. The width of the steps was set at 5, 7, 10, 13, and 18 mm from the end of the waveguide to the opposite side so that the microwave could be uniformly emitted and so that the reflected microwave could reach less than 10 W (the minimum range in the power meter).…”

Section: Experimental Apparatus and Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Simulations and Experiments on O Density and Distribution in Ashing Process Using Surface Plasma Excited by Microwave

Takagi

Yamauchi

Shinmura

2013

Jpn. J. Appl. Phys.

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Simulation methods for the density and spatial distribution of O atoms have been developed to analyze high-density plasma (1011 cm-3) excited by two microwave sources. The density of O atoms, that react with photoresist, was calculated in a gas mixture of CF4 and O2, and the density has a maximum value at 10% CF4 partial pressure. For the distribution simulation, the rate of reaction between O atoms and photoresist was measured in a small cell, and the sticking coefficient was estimated to be 0.002. The O atom distribution on a glass substrate was calculated by the simulator, where the sticking coefficient was input, focusing on the density under a beam that connected the microwave sources and had no plasma source. The results of both the simulations are in good agreement with the experimental results. The simulations were applied to optimize the chamber configuration and process conditions. As a result, a high ashing rate of over 1430 nm with a uniformity of ±9.3% was obtained.

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Section: Experimental Apparatus and Resultsmentioning

confidence: 99%

Section: Experimental Apparatus and Resultsmentioning

confidence: 99%