Abstract:To improve the crystallinity and phase composition of the Hf0.5Zr0.5O2 films, the effects of annealing temperature on metal-ferroelectric-metal devices are studied by electrical measurements, nanobeam electron diffraction (NBD), and TEM. Forming gas annealing (FGA) at 400 o C partially crystallizes the films, and more crystallization can be achieved by FGA at the increasing temperature of 500 o C and 800 o C. After FGA at 400 o C and 500 o C, metastable ferroelectric orthorhombic phase can be obtained as shown… Show more
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