2006
DOI: 10.1088/0268-1242/21/4/004
|View full text |Cite
|
Sign up to set email alerts
|

A kinetic approach to tunnelling at Schottky contacts

Abstract: In this paper, we present a semiclassical kinetic approach to tunnelling through potential barriers, which can be applied to the simulation of planar semiconductor devices. The proposed model includes thermionic emission currents at the metal-semiconductor interface as well as tunnelling currents together with the effect of barrier lowering. The considered scattering mechanisms are electron-phonon and electron-impurity interactions. The numerical scheme used is a combination of multicell methods with high-orde… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2011
2011
2015
2015

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
references
References 23 publications
0
0
0
Order By: Relevance