A Ka-Band Quasi-F<sup>-1</sup> Power Amplifier in a 130 nm SiGe BiCMOS Technology

Manouras, Vasileios; Papananos, Ioannis

doi:10.1109/pacet56979.2022.9976366

2022 Panhellenic Conference on Electronics &Amp; Telecommunications (PACET) 2022

DOI: 10.1109/pacet56979.2022.9976366

|View full text |Cite

A Ka-Band Quasi-F^-1 Power Amplifier in a 130 nm SiGe BiCMOS Technology

Vasileios Manouras

Ioannis Papananos

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique †

Manouras

Papananos

2023

JLPEA

View full text Add to dashboard Cite

This paper deals with the design, analysis, and implementation of a Ka-band, single-stage, quasi-inverse class F power amplifier (PA). A detailed methodology for the evaluation of the active device’s output capacitance is described, enabling the designing of a second-harmonically tuned load and resulting in enhanced performance. A simplified model for the extraction of time-domain intrinsic voltage and current waveforms at the output of the main active core is introduced, enforcing the implementation process of the proposed quasi-inverse class F technique. The PA is fabricated in a 130 nm SiGe BiCMOS technology with fT/fmax=250/370 GHz and it is suitable for 5G applications. It achieves 33% peak power-added efficiency (PAE), 18.8 dBm saturation output power Psat, and 14.7 dB maximum large-signal power gain G at the operating frequency of 38 GHz. The PA’s response is also tested under a modulated-signal excitation and simulation results are denoted in this paper. The chip size is 0.605×0.712 mm2 including all pads.

show abstract

A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique †

Manouras

Papananos

2023

JLPEA

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A Ka-Band Quasi-F^-1 Power Amplifier in a 130 nm SiGe BiCMOS Technology

Cited by 1 publication

References 9 publications

A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique †

A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique †

Contact Info

Product

Resources

About

A Ka-Band Quasi-F-1 Power Amplifier in a 130 nm SiGe BiCMOS Technology

Cited by 1 publication

References 9 publications

A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique †

A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique †

Contact Info

Product

Resources

About

A Ka-Band Quasi-F^-1 Power Amplifier in a 130 nm SiGe BiCMOS Technology