2024
DOI: 10.1109/lssc.2024.3386676
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A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI

Jian Zhang,
Dawei Wang,
Wei Zhu
et al.
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