A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI

Zhang, Jian; Wang, Dawei; Zhu, Wei; Zhai, Ming; Yi, Xiangjie; Wang, Yan

doi:10.1109/lssc.2024.3386676

IEEE Solid-State Circuits Lett.

2024

DOI: 10.1109/lssc.2024.3386676

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A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI

Jian Zhang,

Dawei Wang,

Wei Zhu

et al.

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Doherty Power Amplifier Design via Differential Combining

Moreno Rubio,

Noori

2024

Electronics

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This paper introduces a novel differential combiner designed to effectively address parasitic capacitances of transistors used in power amplifier (PA) designs with precise compensation at a specified frequency. The combiner consists of a λ/4 transmission line with an integrated capacitor of value 2COUT at its midpoint, which ensures accurate cancellation of parasitic effects. This design connects the drain pins of two transistors, which are considered identical in this configuration. By eliminating the need for complex parasitic compensation techniques, this method significantly simplifies the design process of Doherty Power Amplifiers (DPAs). Extensive simulations validate the effectiveness of this approach, highlighting its potential as a versatile and straightforward solution for next-generation communication systems.

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Doherty Power Amplifier Design via Differential Combining

Moreno Rubio,

Noori

2024

Electronics

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show abstract

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A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI

Cited by 1 publication

References 14 publications

Doherty Power Amplifier Design via Differential Combining

Doherty Power Amplifier Design via Differential Combining

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