A Ka band 15W power amplifier MMIC based on GaN HEMT technology

Yu, Xuming; Tao, Hongqi; Wang, Hong

doi:10.1109/iwem.2016.7505042

Cited by 18 publications

(9 citation statements)

References 6 publications

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“…At 35 GHz, a saturated power density of 4 W/mm is achieved for an AlGaN/GaN device with 0.18 mm gate length in [1]. Another AlGaN/ GaN device is reported in [2] with a 5 W/mm power density at 35 GHz. In [4], a 40 W MMIC is realized using a process with 4 W/mm output power density at 30 GHz with 28 V operating voltage.…”

Section: Introductionmentioning

confidence: 95%

“…The performance of GaN HEMTs for Ka-band has been developed over the years, and many monolithic microwave integrated circuits (MMICs) are designed with AlGaN/GaN and InAlGaN/GaN HEMT structures [1][2][3][4][5][6][7][8][9][10][11][12]. At 35 GHz, a saturated power density of 4 W/mm is achieved for an AlGaN/GaN device with 0.18 mm gate length in [1].…”

Section: Introductionmentioning

confidence: 99%

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High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

Akoglu

Sütbaş

Özbay

2022

Int. J. Microw. Wireless Technol.

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In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 ${\rm \mu}$ m gate lengths are characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC is designed, which has a measured gain higher than 19.3 dB across the frequency band of 33–36 GHz. The driver amplifier exhibits 31.9 dB output power and 26.5% power-added efficiency (PAE) at 35 GHz using 20 V supply voltage with 30% duty cycle. Another two-stage MMIC is realized as a power amplifier with a total output gate periphery of 1.8 mm. The output power and PAE of the power amplifier are measured as 3.91 W and 26.3%, respectively, at 35 GHz using 20 V supply voltage with 30% duty cycle. The high efficiency MMICs presented in this paper exhibit the capabilities of NANOTAM's 0.2 $\rm\mu$ m AlGaN/GaN on SiC technology.

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

Akoglu

Sütbaş

Özbay

2022

Int. J. Microw. Wireless Technol.

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“…In [2] it was shown that output power from GaN hybrid amplifiers can be many times higher than competing semiconductor technology such as gallium arsenide (GaAs). In [3] it was shown that 15 W of output power is possible with GaN even at Ka band. An example of microfluidic cooling methods for GaN was investigated in [4] which showed that optimum flow rates can significantly improve GaN output power.…”

Section: Introductionmentioning

confidence: 99%

Balancing Thermal and Electrical Packaging Requirements for GaN Microwave and Millimeter-Wave High Power Amplifier Modules

Sturdivant¹,

Bogdon²,

Chong³

2017

JECTC

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A method for balancing thermal and electrical packaging requirements for gallium nitride (GaN) high power amplifier (HPA) modules is presented. The goal is to find a design approach that minimizes the junction temperature of the GaN so that it is reliable and has interconnects that meet electrical performance requirements. One benefit of GaN is that it can simultaneously achieve high power density and operate at microwave and millimeter-wave frequencies. However, the power density can be so high that the necessary thermal solutions can have negative impact on electrical performance. This is especially a concern for the electrical interconnects required for the input/ output ports on high power amplifier devices. This is because the signal interconnects must operate at GHz frequencies, which means that special care must be taken to avoid problems such as undesired signal coupling and ground path inductance. Therefore, this work focuses on GaN packaging and its integration into a module. The results show that an optimum thickness for the GaN heat spreader exits for thermal performance but the electrical design is impacted negatively if the optimum thermal design is chosen. Therefore, a balanced design is chosen which meets overall system level requirements.

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“…The high output power and high power added efficiency (PAE) are important in these systems, which can effectively improve the system's output power and reduce the cost of heat dissipation. Recently, published papers show steady progress in improving the efficiency and the output power of GaN based Ka‐band power amplifier MMIC . However, there are few reports for GaN HPA MMIC in 33–37 GHz and detailed design approach yet.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, published papers show steady progress in improving the efficiency and the output power of GaN based Ka-band power amplifier MMIC. [1][2][3][4][5][6][7][8] However, there are few reports for GaN HPA MMIC in 33-37 GHz and detailed design approach yet.…”

Section: Introductionmentioning

confidence: 99%

High efficiency 33–37 GHz 20 W GaN HEMT power amplifier MMIC

Tao

Wang

Zhang³

et al. 2017

Micro & Optical Tech Letters

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A high efficiency Ka‐band GaN high power amplifier (HPA) utilizing 0.15‐μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented in this letter. The MMIC is designed with load‐pull method, with the final stage matched to compromise between output power and power added efficiency (PAE). An output power of more than 43 dBm and a power added efficiency of more than 30% over the band of 33–37 GHz under a drain voltage of 24 V at 100 μs pulse‐width and 10% duty‐cycle have been achieved. The chip size is 2.8 mm × 3.4 mm (9.52 mm2).

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A Ka band 15W power amplifier MMIC based on GaN HEMT technology

Cited by 18 publications

References 6 publications

High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

Balancing Thermal and Electrical Packaging Requirements for GaN Microwave and Millimeter-Wave High Power Amplifier Modules

High efficiency 33–37 GHz 20 W GaN HEMT power amplifier MMIC

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