A G-Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology

A G-Band Glass Interposer Technology for the Integration of an Amplified Noise Source based on SiGe BiCMOS 55-nm Technology

“…Second, the available hot noise temperature is determined in eq. (7), by the use of the mismatch factor (7) The third step corresponds to the transposition of the noise temperature at plane B to plane A. Knowing the available gain of the probe used , is determined in eq.…”

“…The substrate hosting the NS chip was a six metallic layer organic substrate stack compatible with routing both the RF signal and DC biases, as outlined in [7]. The NS was packaged in a split-block with a WR5.1 flange termination, allowing interconnection with standard external probes (Fig.…”

“…When directly measured on-wafer, this NS generates a tunable excess noise ratio (ENRav) level up to 37 dB in the 140-170 GHz range and up to 25 dB when the same NS is packaged in a split-block with WR5.1 flange termination. This results in an additional loss of 12 dB in the packaged configuration [7]. Section II recalls the state of the art with the split-block design and ENRav extraction measurements of the amplified NS based on SiGe BiCMOS 55 nm technology for the packaged and on-wafer noise measurements.…”