A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

Buscemi, Fabrizio; Jacoboni, Carlo; Vandelli, Luca; Nardi, Federico; Padovani, Andrea; Kaczer, B.; Garbin, Daniele; Clima, Sergiu; Degraeve, R.; Kar, Gouri Sankar; Tavanti, Francesco; Slassi, Amine; Calzolari, Arrigo; Larcher, Luca

doi:10.1109/ted.2023.3242229

Cited by 2 publications

(3 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Next, space-charge limited currents are only plausible in thick films and low temperatures conditions, whereas Schottky emission and classical hopping conduction (tunneling from trap to trap) were deemed very unlikely to occur. Finally, the multi-phonon trap-assisted tunneling (TAT) [108] was successfully used in describing the off conductivity.…”

Section: Conduction-switching Mechanisms Discussionmentioning

confidence: 99%

“…Since the discovery of OTS materials, many models were developed to explain the threshold switching phenomenon [16,29,[101][102][103][104][105][106][107][108][109][110]. For instance, Kroll et al proposed a thermal runaway model [103,104] that explains the OTS as the result of a Joule heating process, which triggers a positive feedback loop for carrier generation and leads to an exponential increase of the conductivity.…”

Section: Ots Modelsmentioning

confidence: 99%

“…Buscemi et al [108] introduced a hydrodynamic-trapassisted-tunneling (TAT) model that considers the occurrence of temporary and progressive localization-delocalization of the states, creating conductive channels inside the insulating matrix. The transition rates are increased upon Fig.…”

Section: Ots Modelsmentioning

confidence: 99%

See 2 more Smart Citations

Chalcogenide Ovonic Threshold Switching Selector

Zhao,

Clima,

Garbin

et al. 2024

Nano-Micro Lett.

View full text Add to dashboard Cite

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane, commonly referred to as three-dimensional phase change memory, stands out as one of the most promising candidates. The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch (OTS). The OTS device, which employs chalcogenide film, has thereby gathered increased attention in recent years. In this paper, we begin by providing a brief introduction to the discovery process of the OTS phenomenon. Subsequently, we summarize the key electrical parameters of OTS devices and delve into recent explorations of OTS materials, which are categorized as Se-based, Te-based, and S-based material systems. Furthermore, we discuss various models for the OTS switching mechanism, including field-induced nucleation model, as well as several carrier injection models. Additionally, we review the progress and innovations in OTS mechanism research. Finally, we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications, such as self-selecting memory and neuromorphic computing.

show abstract

Section: Conduction-switching Mechanisms Discussionmentioning

confidence: 99%