2021 IEEE Energy Conversion Congress and Exposition (ECCE) 2021
DOI: 10.1109/ecce47101.2021.9595512
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A Hybrid Active Neutral Point Clamped Converter consisting of Si IGBTs and GaN HEMTs for Auxiliary Systems of Electric Aircraft

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Cited by 1 publication
(2 citation statements)
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“…For example, ref. [18] uses GaN HEMTs for positions T2 and T3 since they can achieve high switching frequencies due to their low output capacitances. The challenge of the limited current carrying capability of state-of-the-art GaN switches is overcome by interleaving respective switches.…”
Section: Design Packaging and Thermal Aspectsmentioning
confidence: 99%
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“…For example, ref. [18] uses GaN HEMTs for positions T2 and T3 since they can achieve high switching frequencies due to their low output capacitances. The challenge of the limited current carrying capability of state-of-the-art GaN switches is overcome by interleaving respective switches.…”
Section: Design Packaging and Thermal Aspectsmentioning
confidence: 99%
“…To overcome the inherent limitations of this topology, innovative control strategies and sophisticated hardware designs are required. To take advantage of GaN semiconductors by using these devices in combination with a high voltage level count [15][16][17] and in combination with interleaving to increase the power rating [18], this topology can be applicable.…”
Section: Introductionmentioning
confidence: 99%