A Highly Reliable Nanoscale Biodevice Benefitting from the Charge Plasma Concept – Si and InAs Source

Abstract

A nanoscale biodevice based on the tunneling field effect transistor (TFET) has been reported for the detection of target biomolecules. Two kinds of materials in the cases of silicon and InAs have been incorporated inside the source region for the sensitivity performance comparison. In order to prevent the diffusion of the impurities in the nanoscale biodevice during thermal processing, the entire structure has been doped at a N-type doped level forming a junctionless device. The approach that we have uses the charge plasma to convert the N-type source into the P-type source resulting in the creation of the TFET device. Indeed, the entire plasma appears inside the source by the auxiliary plasma gate electrodes. The obtained results performed by the SILVACO simulator show the improvement of the sensitivity of the proposed biodevice while keeping the reliability high. Also, the fill-factor impact and trap-assisted-tunneling effects on sensing performance are monitored for the biodevices under the study and the interesting results are presented.