A highly integrated radio for high performance, low-cost 2.4 GHz ISM cordless applications

Good, P.; Cheng, Jackie; Cho, Hae-Seok

doi:10.1109/mwsym.2000.860973

Cited by 6 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…PldB and/or IP3, are also desired [l]. For the size reduction of RF section, system chips using Si technologies have been reported [2], [3]. The development of SiGe process having higher RF performance than conventional Si process has allowed us to design lower noise and lower d.c. current drive LNAs suitable for system chips [4].…”

Section: Introductionmentioning

confidence: 99%

Dual bias feed SiGe HBT low noise linear amplifier

Taniguchi¹,

Maeda²,

Ikushima³

et al.

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

View full text Add to dashboard Cite

A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode / resistor dual bias feed circuit for the base of the HBT to extend its PldB.In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the PldB improvement of 5dB compared with the conventional resistor feed LNA.

show abstract

Section: Introductionmentioning

confidence: 99%