2009
DOI: 10.1109/jssc.2009.2022914
|View full text |Cite
|
Sign up to set email alerts
|

A Highly Integrated 1.8 GHz Frequency Synthesizer Based on a MEMS Resonator

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
38
0

Year Published

2010
2010
2022
2022

Publication Types

Select...
6
1
1

Relationship

0
8

Authors

Journals

citations
Cited by 60 publications
(38 citation statements)
references
References 43 publications
0
38
0
Order By: Relevance
“…Hence, the required "Transimpedance gain" should be greater than 20 log 10 (698 k à 1:5) or, 120.39 dB-Ω. As shown in Table I, the total 'transimpedance' gain has been achieved as 122 dB-Ω at MEMS resonant frequency of 17.22 MHz, which fulfills the criteria highlighted above [5]. Additionally, total phase shift achieved is À70 0 , which is nearly nullifying MEMS phase shift of þ95 0 as found from S 21 data in Fig.…”
Section: Resultsmentioning
confidence: 70%
See 2 more Smart Citations
“…Hence, the required "Transimpedance gain" should be greater than 20 log 10 (698 k à 1:5) or, 120.39 dB-Ω. As shown in Table I, the total 'transimpedance' gain has been achieved as 122 dB-Ω at MEMS resonant frequency of 17.22 MHz, which fulfills the criteria highlighted above [5]. Additionally, total phase shift achieved is À70 0 , which is nearly nullifying MEMS phase shift of þ95 0 as found from S 21 data in Fig.…”
Section: Resultsmentioning
confidence: 70%
“…5], a highest 135 dB-Ω gain has been achieved for the sustaining amplifier and at resonant frequency, it is 122 dB-Ω, as shown in Table I. But based on the conventional MEMS oscillator theory in F. Nabki's work in 2009 [5], at least 1.5 times of motional resistance can be targeted to set the minimum transimpedance gain in designing a CMOS sustaining amplifier. Hence, the required "Transimpedance gain" should be greater than 20 log 10 (698 k à 1:5) or, 120.39 dB-Ω.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Pierce circuit topology and TIA circuit topologies in [7]- [10], [14]- [16] was simulated using MIMOS 0.35µm technology. Their DC simulation results are summarized in Table 1.…”
Section: Oscillator Topologiesmentioning
confidence: 99%
“…Due to the Electrostatic force the beam will bend and beam will oscillates by applying ac signal at fixed electrode. The resonance frequency is given by [2], [1], [3] …”
Section: Principlementioning
confidence: 99%