A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology

Shivan, T.; Weimann, Nils; Hossain, Maruf; Stoppel, D.; Boppel, Sebastian; Ostinelli, O.; Doerner, Ralf; Bolognesi, C. R.; Krozer, Viktor; Heinrich, W.

doi:10.1109/lmwc.2018.2871336

Cited by 16 publications

(10 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The magnitude of the electric field in the InP substrate is shown in Figure 3b, where the resonant frequency is 180 GHz. It can be clearly seen that the electric field maximum distribution is equal to the mode indices (m, n, p) = (3, 3, 0), which is in agreement with f 3, 3, 0 in Equation (6). Because the thickness of the chip is only 100 µm, there is no vertical resonance below 424 GHz (m, n, p = 0, 0, 1); that is, p ≡ 0 below 424 GHz.…”

Section: Parasitic Substrate Mode Suppressionsupporting

confidence: 81%

See 1 more Smart Citation

A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

Yanfei

et al. 2021

Electronics

View full text Add to dashboard Cite

This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measurement results demonstrate a peak gain of 19.5 dB at 146 GHz and a 3 dB bandwidth of 56–161 GHz (relative bandwidth of 96.8%). The saturation output power achieves 5.9 and 6.5 dBm at 94 and 140 GHz, respectively. The 1 dB compression output power is −4.7 dBm with an input power of −23 dBm at 94 GHz. The proposed amplifier has a compact chip size of 1.2 × 0.7 mm2, including DC and RF pads.

show abstract

Section: Parasitic Substrate Mode Suppressionsupporting

confidence: 81%

“…The traveling wave amplifier is common in broadband amplifier design, and is also known as a distributed amplifier (DA) [1][2][3][4][5][6]. The bandwidth, flatness, and output power of DAs are outstanding among broadband amplifiers.…”

Section: Introductionmentioning

confidence: 99%

A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

Yanfei

et al. 2021

Electronics

View full text Add to dashboard Cite

show abstract

“…In terms of RF power, the maximum RF output power, P sat , of 10 dBm at 160 GHz makes the circuit a potential candidate for ultra-broadband, low-noise high-power applications covering W-band and D-band simultaneously. Reports of high and uniform output power of DA using the same technology has been published for lower frequency range [29].…”

Section: Measurements and Discussionmentioning

confidence: 99%

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

Shivan

Kaule

Hossain

et al. 2019

Int. J. Microw. Wireless Technol.

Self Cite

View full text Add to dashboard Cite

This paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

show abstract

“…The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor which has been broadly used in radio frequency (RF), microwave and even millimeter wave applications, because of its superior capability in both highspeed and large-current driving. [1][2][3] An accurate small signal equivalent circuit models of HBT greatly vital to circuit design, process technology evaluation and device model optimization. 4,5 However, with the increase of frequency, it remains a lot of parasitic effects in HBT devices which may affect the device performance.…”

Section: Introductionmentioning

confidence: 99%

An improved small signal model of InP HBT for millimeter‐wave applications

Zhang

Gao

2021

Micro & Optical Tech Letters

View full text Add to dashboard Cite

In this letter, an improved small‐signal equivalent circuit model of InP heterojunction bipolar transistors (HBTs) for millimeter‐wave applications is presented. The proposed small‐signal model takes into account the parasitic effect in the collector part which can effectively improve the accuracy of S parameter. In the frequency range of 2–110 GHz, good agreements between the measured and model‐calculated data can be achieved to demonstrate good modeling accuracy.

show abstract

A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology

Cited by 16 publications

References 13 publications

A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

An improved small signal model of InP HBT for millimeter‐wave applications

Contact Info

Product

Resources

About