A highly efficient non-isolated DC-DC buck-boost converter with a cascode GaN-FET and SiC-Schottky diode

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad A.

doi:10.1109/sustech.2017.8333529

Cited by 7 publications

(3 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Simulation of a 30-50-V (PV) and 50-100-V (battery)/380-V, 1-kW, 50-kHz DITLQZC verified the feasibility of the design. In Reference [76], cascode GaN HEMTs and a SiC Schottky diode were used to design a 150-200/120-380-V, 1-kW, 20-100-kHz, >96% efficiency converter for residential PV applications. The performances of cascode GaN HEMT and Si CoolMOS in an interleaved converter were compared in Reference [77] for efficiency assessment.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

View full text Add to dashboard Cite

Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

show abstract

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

View full text Add to dashboard Cite

show abstract

“…Fast switching and low on-resistance characteristics of silicon carbide (SiC ) and gallium nitride (GaN) power devices increase the drive frequency of switching power supplies and enable miniaturization of direct current-direct current (DC-DC) converters [1][2][3][4]. Miniaturizing a DC-DC converter can increase its power density, but it also increases its loss density [5,6].…”

Section: Introductionmentioning

confidence: 99%

Reduction of Alternating‐Current Resistance and Heat Generation of Spiral Inductors with Magnetic Sealing Technique

Shimura

Kanaya

Kobayashi

et al. 2023

IEEJ Transactions Elec Engng

View full text Add to dashboard Cite

As direct current-direct current (DC-DC) converters increase their power density, their inductors require a planar structure with good heat dissipation. Planar inductors use rectangular wires or substrate patterns for their windings. Winding structures can be stacked, in which the structures are on top of each other; spiral, in which the windings are configured in the same plane; or composite structures of both. Here, the authors clarify the alternating-current (AC) resistance of inductors with different winding structures and propose a magnetic sealing technique (MST) that reduces the AC resistance of low-profile spiral inductors. Magnetic field simulation revealed the effect of MST on the AC resistance and inductance. Furthermore, spiral inductors with MST were fabricated, and the AC resistance reduction effect of MST was confirmed with impedance analyzer. The heat-generation reduction effect in an MST inductor was demonstrated in a 1-MHz 100 V/320 V 800-W boost DC-DC converter prototype with GaN devices.

show abstract

“…The GaN cascodes also have much smaller output capacitance and hence facilitating easy soft-switching implementation [18]. Other applications of GaN cascodes could be in the non-isolated Point-of-Load (POL) buck-regulator converters [13], quadrupled boost converter based on four GaN Cascodes in [19] with potential application in domestic photovoltaic converters [20], and in [21] for active PFC converters. GaN cascode half bridge building blocks are also demonstrated in [22] with a current compensation inductor between two cascode half-bridges phase legs.…”

Section: Introductionmentioning

confidence: 99%