Abstract:A highly efficient dual-mode linear CMOS stacked-FET power amplifier (PA) is implemented for 3G UMTS and 4G LTE handset applications. High efficiency is achieved at a backed-off output power (Pout) below 12 dBm by employing an active-bypass amplifier, which consumes very low quiescent current and has high load-impedance. The output paths between high-and low-power modes of the PA are effectively isolated by using a bypass switch, thus no RF performance degradation occurs at high-power mode operation. The fabri… Show more
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