A Highly Efficient and Linear Power Amplifier for 28-GHz 5G Phased Array Radios in 28-nm CMOS

Shakib, Sherif; Park, Hyun-Chul; Dunworth, Jeremy; Aparin, V.; Entesari, Kamran

doi:10.1109/jssc.2016.2606584

Cited by 181 publications

(49 citation statements)

References 34 publications

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“…Measured large-signal CW performance vs. frequency. specifications, this PA delivers 5.9dB and 4.7dB higher average P OUT than [1] and [3] respectively, despite the lower V DD . The PA in [2] is the only work that achieves higher P OUT under modulated signal but with a much higher (x2.4) supply voltage and much lower modulation bandwidth (less than 32%).…”

Section: Resultsmentioning

confidence: 82%

“…2) Modulated signals with high spectral efficiency show large peak-to-average-powerratio, challenging the linearity vs. efficiency trade-off for a given average P OUT . 3) Digital pre-distortion is not easily applicable when several PAs are integrated in an array [1]. Therefore, techniques to compensate AM-PM distortion over a large bandwidth are desirable to improve both inband and out-of-band linearity (i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The frequency spectrum above 24GHz will be a key enabler for future Gb/s fifth generation (5G) wireless communication systems [1,2]. To maximize the data rate, high order modulation schemes (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, the work in [1] has shown the feasibility of 28GHz CMOS PAs with outstanding efficiency. However, the BW, average P OUT and ACPR under modulated signal considerably limit the achievable link distance and coexistence with adjacent channels.…”

Section: Introductionmentioning

confidence: 99%

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A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

Vigilante

Reynaert

2017

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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Abstract-This paper presents a 29-to-57GHz (65% BW) AM-PM compensated class-AB power amplifier tailored for 5G phased arrays. Designed in 0.9V 28nm CMOS without RF thick top metal, the PA achieves a Psat=15.1dBm±1.6dB and │AM-PM│<1° from 29-to-57GHz, with a peak PAE of 24.2%. Techniques are studied to realize the required load impedance and distortion cancellation over the wide band of operation, while allowing 2-way power combining to further increase the delivered POUT. The very low AM-PM distortion of the realized PA enables up to 10.1, 8.9, 5.9dBm average POUT while amplifying a 1.5, 3, 6Gb/s 64-QAM respectively at 34GHz with EVM/ACPR better than -25dBc/-30dBc, without any digital pre-distortion.Index Terms-5G mobile communication, power amplifiers, AM-PM, broadband, wideband, coupled resonators, gain-bandwidth product, GBW, mm-Wave, CMOS. I. INTRODUCTIONThe frequency spectrum above 24GHz will be a key enabler for future Gb/s fifth generation (5G) wireless communication systems [1,2]. To maximize the data rate, high order modulation schemes (e.g. 64-QAM) with large RF bandwidth (>100MHz) will be adopted. At the transmitter side, this implies several design challenges. 1) A wideband PA is needed to cover several channels, amplify wideband signals and ensure robust performance against PVT variations. 2) Modulated signals with high spectral efficiency show large peak-to-average-powerratio, challenging the linearity vs. efficiency trade-off for a given average P OUT . 3) Digital pre-distortion is not easily applicable when several PAs are integrated in an array [1]. Therefore, techniques to compensate AM-PM distortion over a large bandwidth are desirable to improve both inband and out-of-band linearity (i.e. EVM and ACPR).Recently, the work in [1] has shown the feasibility of 28GHz CMOS PAs with outstanding efficiency. However, the BW, average P OUT and ACPR under modulated signal considerably limit the achievable link distance and coexistence with adjacent channels. 2

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Section: Resultsmentioning

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

Vigilante

Reynaert

2017

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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“…In the work of [1], high efficiency and linearity are achieved by using subthreshold biasing and inductive degeneration. And as a variable, the size of the transistor is optimized for -25dBc EVM.…”

Section: Introductionmentioning

confidence: 99%

A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS

Zhang

Reynaert

2017

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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Abstract-This paper presents a high-efficiency, linear power amplifier (PA) for 28GHz mobile communications in 40nm CMOS technology. The design and layout are optimized for high linearity while maintaining high gain and output power. A capacitance neutralized differential pair with source degeneration inductor for linearity enhancement is discussed. The inductive degeneration technique greatly increases the optimal load impedance, which enables a low loss parallel power combining. The complete PA achieves a measured saturated output power of 18.1dBm with 41.5% power-added efficiency (PAE). With 6 Gb/s QAM-64 signals, the proposed PA achieves an average output power of 8.4dBm and 8.8% PAE, with -25 dBc EVM. All measurements are performed with a fixed bias condition.Index Terms-CMOS, power amplifier, inductive degeneration, linearity, EVM, 5G. I. INTRODUCTIONSeveral frequency bands in millimeter-wave (mmWave) range have been licenced for future fifth generation (5G) wireless communication systems, enabling Gb/s data rate with low latency. To meet the demand of large data traffic within limited spectrum resources, high order modulation scheme like 64 QAM will be adopted, which presents large peak-to-average power ratio (PAPR).To amplify these modulated signals with high fidelity, PA designs for 5G applications have to meet the stringent AM-AM and AM-PM linearity requirements. In RF and microwave range, multiple correction techniques have been investigated to improve linearity of the front-ends. However, it is challenging to deploy these techniques into 5G applications, such as phased arrays and MIMO systems, where the baseband bandwidth is relatively large and the function units might be distributed into the systems. Digital pre-distortion (DPD) for each PA can be prohibitively complex for large-scale arrangement. In any case, the nonlinearity property of the PA itself needs to be dealt with in the first place.Recently, lots of efforts have been put to improve the PA performance for 5G applications. In the work of [1], high efficiency and linearity are achieved by using subthreshold biasing and inductive degeneration. And as a variable, the size of the transistor is optimized for -25dBc EVM. In [2], the linearity is greatly improved by using second harmonic control and deep class-AB biasing. However, the overall performance of the PA, in terms of

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mmWave Highly‐Linear Broadband Power Amplifiers

Shalu¹,

Sindhu²,

Kumar³

2023

RF Circuits for 5G Applications

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A Highly Efficient and Linear Power Amplifier for 28-GHz 5G Phased Array Radios in 28-nm CMOS

Cited by 181 publications

References 34 publications

A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS

mmWave Highly‐Linear Broadband Power Amplifiers

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