Articles you may be interested inFerroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor nonvolatile memories with an amorphous oxide semiconductor Appl. Phys. Lett. 106, 093503 (2015); 10.1063/1.4913920 The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) Appl. Phys. Lett. 99, 012901 (2011); 10.1063/1.3608145 Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics J. Appl. Phys. 108, 094102 (2010); 10.1063/1.3500428 Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applicationsThe authors demonstrated flexible memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomer substrates. The carrier mobility, memory on/off ratio, and subthreshold swing of the flexible MTFTs showed 21 cm 2 V Ă1 s Ă1 , 10 7 , and 0.5-1 V/decade, respectively. The memory window of 13 V at 620 V programming was confirmed for the device without any interface layer. These obtained values did not significantly change when the substrate was bent with a radius of curvature of 10 mm. The memory on/off ratio was initially 5 Ă 10 4 and maintained at 10 2 even after a lapse of 3600 s. The fabricated MTFTs exhibited encouraging characteristics on the elastomer that are sufficient to realize mechanically flexible nonvolatile memory devices.