ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference 2016
DOI: 10.1109/esscirc.2016.7598284
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A high-voltage compliant, electrode-invariant neural stimulator front-end in 65nm bulk-CMOS

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Cited by 11 publications
(1 citation statement)
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“…An example system manufactured with CMOS technology enables both common mode and differential real time artifact cancelation (Smith et al, 2017). In combination with this, new CMOS stimulator front-ends are being developed which could allow for more scalable, integrated BCI devices with wireless, signal processing, and stimulator blocks (Pepin et al, 2016). Advances in this area will permit a better understanding of how the brain responds to electrical stimulation, as well as permit more complex closed loop applications (Zhou et al, 2018a) where neural activity in close temporal and spatial relation to the site of stimulation can be integrated into the control system.…”
Section: Enabling Technologiesmentioning
confidence: 99%
“…An example system manufactured with CMOS technology enables both common mode and differential real time artifact cancelation (Smith et al, 2017). In combination with this, new CMOS stimulator front-ends are being developed which could allow for more scalable, integrated BCI devices with wireless, signal processing, and stimulator blocks (Pepin et al, 2016). Advances in this area will permit a better understanding of how the brain responds to electrical stimulation, as well as permit more complex closed loop applications (Zhou et al, 2018a) where neural activity in close temporal and spatial relation to the site of stimulation can be integrated into the control system.…”
Section: Enabling Technologiesmentioning
confidence: 99%