A high-speed Hi-CMOSII 4K static RAM

Minato, O.; Masuhara, T.; Sasaki, Tomohiro; Sakai, Yoshio; Yoshizaki, K.

doi:10.1109/jssc.1981.1051621

Cited by 12 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first electrical-based redundancy schemes involved the severing of fuses with large electric current pulses. 5 The semiconductor memory industry has not yet settled on a "one best technique" and redundancy technology is continuing on its course of rapid evolution. Similarly, the first laser-based redundancy schemes involved the severing of target links with laser pulses.…”

Section: Introductionmentioning

confidence: 99%

Computer simulation of target link explosion in laser programmable redundancy for silicon memory

Scarfone

Chlipala

1986

J. Mater. Res.

View full text Add to dashboard Cite

Pulses of ^-switched Nd-YAG radiation have been used to remove polysilicon target links during the implementation of laser programmable redundancy in the fabrication of silicon memory. The link is encapsulated by transparent dielectric films that give rise to important optical interference effects modifying the laser flux absorbed by the link and the silicon substrate. Estimates of these effects are made on the basis of classical plane-wave procedures. Thermal evolution of the composite structure is described in terms of a finite-difference form of the three-dimensional heat diffusion equation with a heat generation rate having a Gaussian spatial distribution of intensity and temporal shapes characteristic of commercial lasers. Temperature-dependent thermal diffusivity and melting of the polysilicon link are included in the computer modeling. The calculations account for the discontinuous change in the link absorption coefficient at the transition temperature. A threshold temperature and corresponding pressure, sufficiently high to rupture the dielectric above the link and initiate the removal process, are estimated by treating the molten link as a hard-sphere fluid. Numerical results are presented in the form of three-dimensional temperature distributions for .1.06 and 0.53/zm radiation with pulse energies 3.5 and 0.15//J, respectively. Similarities and differences between heating effects produced by long (190 ns FWHM/740 ns duration) and short (35 ns FWHM/220 ns duration) pulses are pointed out. 368J. Mater. Res.

show abstract

Section: Introductionmentioning

confidence: 99%

Computer simulation of target link explosion in laser programmable redundancy for silicon memory

Scarfone

Chlipala

1986

J. Mater. Res.

View full text Add to dashboard Cite

show abstract

Effects of Q-switched green laser beam scanning on silicon bipolar transistor electrical characteristics

Parker

Porter

Zhu

et al. 1982

Journal of Applied Physics

View full text Add to dashboard Cite

Silicon bipolar transistors were scanned by a Q-switched green (530-nm wavelength) laser beam and subsequently heat treated. Under fixed laser scanning conditions there is a laser power threshold (0.5 mW) above which the forward current gain begins to decrease and the reverse emitter-base junction leakage current begins to increase and another laser power threshold (0.8 mW) above which surface changes in the silicon and oxide are observable. The changes in electrical characteristics are stable for post scanning anneals up to 400 °C, yet are almost completely eliminated by 800 °C anneals. These effects are due to changes in the minority carrier lifetime and surface recombination rate by the laser scanning. Under proper scanning conditions current gain may be controlled without visible damage, without degradation of breakdown voltage, and without increased base-collector reverse leakage current.

show abstract

Laser-formed connections using polyimide

Raffel

Freidin

Chapman

1983

Applied Physics Letters

View full text Add to dashboard Cite

Electrical connections have been formed in a new lateral link structure which uses polyimide in the gap between, and overlapping, two aluminum electrodes. An argon ion laser, with a pulse width of 1 ms and power levels of about 2 W, was used to locally graphitize the polyimide. One kilohm connections were formed reliably in links ranging in width between 4 and 15 μm and gap length between 2 and 5 μm. This technique is the simplest yet proposed for restructuring the connections on an integrated circuit, after fabrication and test, in order to incorporate redundancy for yield improvement.

show abstract

A high-speed Hi-CMOSII 4K static RAM

Cited by 12 publications

References 5 publications

Computer simulation of target link explosion in laser programmable redundancy for silicon memory

Computer simulation of target link explosion in laser programmable redundancy for silicon memory

Effects of Q-switched green laser beam scanning on silicon bipolar transistor electrical characteristics

Laser-formed connections using polyimide

Contact Info

Product

Resources

About