2006
DOI: 10.1109/bipol.2006.311170
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A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures

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Cited by 22 publications
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“…8. The high gain amplifier of the integrator is a modified version of the basic folded cascode amplifier discussed in [32][33][34] and the G m stage of the amplifier is designed with bipolar transistors as 4 10/0.28 suggested in [35]. To obtain a very low-frequency pole without affecting the high gain, the output resistance of the circuit has to be maximized.…”
Section: A Issues Of Delay Mismatch and Signal Swingmentioning
confidence: 99%
“…8. The high gain amplifier of the integrator is a modified version of the basic folded cascode amplifier discussed in [32][33][34] and the G m stage of the amplifier is designed with bipolar transistors as 4 10/0.28 suggested in [35]. To obtain a very low-frequency pole without affecting the high gain, the output resistance of the circuit has to be maximized.…”
Section: A Issues Of Delay Mismatch and Signal Swingmentioning
confidence: 99%