“…The highest PF value we have achieved is about 3.92 μW m −1 K −2 at the doping ratio of 5 mol %. A summary of previously reported PF values as a function of electrical conductivities for 3D and 2D OIHP semiconductors at room temperature (RT), including MAPbX 3 (X denotes the halide ions) ( Haque et al., 2019 ; Long et al., 2019 ; Mettan et al., 2015 ; Tang et al., 2020 ; Wu et al., 2018 ; Xie et al., 2021 ; Xiong et al., 2019 ; Ye et al., 2017 ), MASnI 3 ( Hao et al., 2014 ; Haque et al., 2020a ), (PEA) 2 MA 2 Sn 3 I 10 ( Yang et al., 2021 ), and (4Tm) 2 FASn 2 I 7 ( Hsu et al., 2021 ), is shown in Figure 4 D. It is seen that the PF value we have achieved in (PEA) 2 SnI 4 by SnI 4 doping is among the highest ones ( Hsu et al., 2021 ; Yang et al., 2021 ). It is also notable that Sn-based OIHPs, which generally have higher σ than Pb-based OIHPs, exhibit higher PF values, suggesting that Sn-based OIHPs are very attractive for high-performance TE devices.…”