A high power inverse class-F GaN amplifier for L-band GPS applications

Cui, Can; Yuk, Kelvin; Wu, Hemin; Branner, G.R.

doi:10.1109/wamicon.2018.8363922

Cited by 3 publications

(1 citation statement)

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“…Several works have confirmed that if only the first three voltage and current harmonic components are properly tuned then a DC-to-RF efficiency of greater than 80% can be obtained [4][5][6]. The optimal values of harmonic load impedances presented to the extrinsic plane of the RF transistor are usually extracted using the load-pull technique in order to maximize the power added efficiency (PAE) of the power amplifier [7,8]. In this contribution, the desired harmonic load impedances are derived analytically as functions of the package parasitic capacitances and inductances using the chip and packaged transistor models.…”

Section: Introductionmentioning

confidence: 99%

An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

Ali

Al-Muifraje

Saeed

2020

ETJ

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The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.

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