2013
DOI: 10.1109/jphotov.2012.2230217
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A High-Power-Density DC–DC Converter for Distributed PV Architectures

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Cited by 42 publications
(18 citation statements)
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“…1, where vIN is photovoltaic module voltage, regulated by a maximum power point (MPP) tracker; vS is the DC-DC converter (operating as partial power processor (PPP)) output voltage and vBUS = vIN + vS is grid-connected inverter regulated input voltage. As explained in [1] and [2], PPP rating depends on the vIN/vBUS voltage ratio.…”
Section: Indexmentioning
confidence: 97%
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“…1, where vIN is photovoltaic module voltage, regulated by a maximum power point (MPP) tracker; vS is the DC-DC converter (operating as partial power processor (PPP)) output voltage and vBUS = vIN + vS is grid-connected inverter regulated input voltage. As explained in [1] and [2], PPP rating depends on the vIN/vBUS voltage ratio.…”
Section: Indexmentioning
confidence: 97%
“…N [1] and [2], high-efficient high power density series-type partial power processing topology, implemented with silicon carbide devices, maximizing solar energy harvesting capabilities, was discussed. Series-type partial photovoltaic power processing arrangement under consideration is shown in Fig.…”
Section: Indexmentioning
confidence: 99%
See 1 more Smart Citation
“…Finally, simulated concentrator transmission efficiency and electrical efficiency are included. DC‐DC power conditioning efficiency of 98% and 2% series resistance loss is included. DC‐DC power conditioning is used to combine the power from the four independently electrically connected subcells.…”
Section: Module Efficiency Projectionmentioning
confidence: 99%
“…Short switching times of wide-bandgap elements lead to low switching energy losses and, therefore, frequency may be elevated in order to decrease size and weight of the passive elements-inductors and capacitors. This approach is very beneficial, as passive elements greatly contribute to volume and weight of the system and, in consequence, the power density may be noticeably increased [6,12,13]. On the other hand, a hard-switching operation at hundreds of kHz, even with newest SiC or GaN (Gallium Nitride) transistors, reduces an efficiency of the DC-DC converter.…”
Section: Introductionmentioning
confidence: 99%