A high power circuit model for the gate turn off thyristor

Tsay, C.L.; Fischl, R.; Schwartzenberg, J.W.; Kan, Hirofumi; Barrow, J.

doi:10.1109/pesc.1990.131214

Cited by 23 publications

(9 citation statements)

References 10 publications

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“…Due to the wide range of characteristics modeled and its simplicity, the two transistor -three resistor (2T-3R) thyristor model [10,11] was implemented to model the operation of the IXYS CWP25 thyristor chip [12].The model is based on the two transistor model derived from the physical structure of the thyristor. Bipolar transistor models were based on the Ebers-Moll model.…”

Section: Thyristors Modelmentioning

confidence: 99%

Modeling of an EMC test-bench for conducted emissions in solid state applications

Micallef

Staines

Apap

2010

Melecon 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference

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In the area of EMC performance of electric motor drives, research is mainly focused on the EMC performance of inverter based drives. However, in most instances the soft starter is still an appropriate choice for motor control especially when accurate speed control of the load is not a specific requirement. The EMI generation of these converters has not been given the required importance, with only a few publications regarding this issue available in the last decades. A simulation model that considers the operation of solid state devices in an EMC conducted emission measurement laboratory environment was developed. The model was implemented in MATLAB® and Simulink® using a time domain approach. Models for the LISN, EMI receiver, power cables, thyristor power modules and induction motor load were developed and implemented. These models were developed so as to reflect the actual physics of the components and, where possible, model parameters were obtained through analysis of the geometry of the system through simplifications of the surrounding environment. The simulation was then used to gain insight on the EMI generation mechanisms of the solid state system. I.

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Section: Thyristors Modelmentioning

confidence: 99%

Modeling of an EMC test-bench for conducted emissions in solid state applications

Micallef

Staines

Apap

2010

Melecon 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference

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“…One functional model for the GTO uses a set of two-transistor and three-resistor (2T-3R) cells, which is an extension of the classical two-transistor analogy for a fourlayer device. The three resistors are added so that the model can simulate Stype negative differential resistance [10]. The model presented in [10] has been tuned with physical insight into the single island turn-off mechanism [11].…”

Section: Ucrl-id-149060mentioning

confidence: 99%

“…The three resistors are added so that the model can simulate Stype negative differential resistance [10]. The model presented in [10] has been tuned with physical insight into the single island turn-off mechanism [11]. Figure 3 illustrates the basis for using the 2T-3R cell for modeling the GTO with SPICE.…”

Section: Ucrl-id-149060mentioning

confidence: 99%

A SPICE Model and Electrostatic Field Analysis of the MOS Turn-Off Thyristor

Kelly¹,

Mayhall²,

Wilson³

et al. 2002

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This paper presents a circuit model and an electrostatic field analysis with an approximate model of the SDM170HK MOS turn-off thyristor (MTO) fabricated by Silicon Power Corporation. The circuit model consists of five cells, each containing two bipolar junction transistors and three resistors. The turn-off feature of the MTO was simulated by inserting an array of 21 Fairchild FDS6670A MOSFET importable sub-circuit components between the cathode and the turn-on gate. The model was then used to create a four-terminal sub-circuit component representing the MTO that can be readily imported into computer-aided circuit design programs such as PSPICE and Micro-Cap. The generated static I-V characteristics and simulated switching waveforms are shown. The electrostatic field analysis was done for the maximum operating voltage of 4.5 kV using the Ansoft Maxwell 3D field simulator. Electrostatic field magnitudes that exceed the nominal air breakdown threshold of 30 kV/cm were observed surrounding the simulated turn-off gate wire, the turn-off gate ring contact, and the cathode ring contact. The resulting areas of high fields are a concern, as arc track marks have been found on the inner surface of the ceramic insulator near the internal gate connections of a failed device.

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“…This concept is used to explain how a GTO device operates [6,7] and to model the GTO. However, the model used in Ref.…”

Section: Introductionmentioning

confidence: 99%

“…However, the model used in Ref. [6] consists of more than two dual-BJT (a p-n-p and an n-p-n BJTs) model cells along with some internal resistors. But the parameter values of each cell are different, and the GTO tail current is not modeled.…”

Section: Introductionmentioning

confidence: 99%

A complete composite GTO model for circuit simulations

Qian

et al. 1998

J. of Electron.(China)

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The paper presents a complete composite gate turn-off thyristor (GTO) model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the complete composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device. In particular, the GTO gate dynamical characteristics in practical circuits are discussed and experimental results are included.

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A high power circuit model for the gate turn off thyristor

Cited by 23 publications

References 10 publications

Modeling of an EMC test-bench for conducted emissions in solid state applications

Modeling of an EMC test-bench for conducted emissions in solid state applications

A SPICE Model and Electrostatic Field Analysis of the MOS Turn-Off Thyristor

A complete composite GTO model for circuit simulations

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