A high performance V-band monolithic FET transmit-receive switch

Lan, G.L.; Dunn, Dixie; Chen, J.C.; Pao, C.K.; Wang, D.C.

doi:10.1109/mcs.1988.197299

Cited by 31 publications

(13 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The -band switch demonstrated a measured on-state insertion loss of less than 4 dB with an off-state isolation of better than 30 dB from 53 to 61 GHz. The measured isolation results outmatch the reported -and -band MMIC passive FET switches [4]- [6], [11]- [13] with slightly higher on-state insertion losses.…”

Section: Introductionsupporting

confidence: 54%

“…However, at higher frequencies, the parasitic capacitance (mainly the drain-to-source capacitance ) will degrade the isolation performance significantly. Most MMW monolithic passive HEMT switches reported to date were parallel resonant-type FET switches [6], [7], with the isolation performance lower than 30 dB. A series resonant-type -band SPDT passive HEMT switch demonstrated 3.9-dB insertion loss and 41-dB isolation at 59 GHz with a chip size of 3.3 1.7 mm [8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Lin

Wang

Niu

et al. 2003

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

This paper proposes a new design method for passive FET switches in the millimeter-wave (MMW) regime. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off state at high frequencies. By means of this new design concept, aand -band monolithic-microwave integrated-circuit single-pole double-throw (SPDT) switches using a GaAs pseudomorphic high electron-mobility-transistor process are demonstrated. The -band SPDT switch has a measured isolation better than 30 dB for the off state and 2-dB insertion loss for the on state from 38 to 45 GHz, while the -band switch also shows a measured isolation better than 30 dB for the off state and 4-dB insertion loss for the on state from 53 to 61 GHz. The obtained isolation performance using this design approach outmatches previously published FET switches in the MMW frequency range.Index Terms-High electron-mobility transistor (HEMT), millimeter wave (MMW), monolithic microwave integrated circuit (MMIC), switch.

show abstract

Section: Introductionsupporting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Lin

Wang

Niu

et al. 2003

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…4. The parameters of the model are (2) and (3) where is the characteristic impedance, is the propagation constant, and is the physical length of the transmission line.…”

Section: Design and Analysis Of Spst Switch Using Traveling-wavementioning

confidence: 99%

“…The passive HEMT [or field-effect transistor (FET)] switches are still very popular since they are easy to fabricate with the HEMT monolithic-microwave integrated-circuit (MMIC) process and to integrate to other circuits on a single chip. Most passive HEMT switches were resonant-type FET switches [2], [3] with the isolation performance lower than 30 dB. There were some other approaches for passive HEMT switches to obtain good isolation at the cost of huge chip area, such as high-isolation -band HEMT switches reported in [4], utilized two-stage unterminated quarter-wavelength shunt design to achieve up to 50-dB isolation, and a switching low-noise amplifier (LNA) using Lange couplers [5].…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave MMIC passive HEMT switches using traveling-wave concept

Lin

Chen

et al. 2004

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

This paper describes the design of millimeter-wave wide-band monolithic GaAs passive high electron-mobility transistor (HEMT) switches using the traveling-wave concept. This type of switch combined the off-state shunt transistors and series microstrip lines to form an artificial transmission line with 50-characteristic impedance. A 15-80-GHz single-pole double-throw (SPDT) switch in conjunction with quarter-wavelength impedance transformers demonstrates an insertion loss of less than 3.6 dB and an isolation of better than 25 dB. Another type of wide-band switch was designed by using a series HEMT switch to replace the quarter-wavelength transformer, and the operating band can be extended to dc. With this scheme, dc-80-GHz single-pole single-throw (SPST) and dc-60-GHz SPDT switches are also developed with compact chip size. From dc to 80 GHz, the insertion loss and isolation of the SPST switch are better than 3 and 24 dB, respectively. The SPDT switch has an insertion loss of better than 3 dB and an isolation of better than 25 dB from dc to 60 GHz. The analysis of circuit characteristics and design procedures are also included. It is concluded that the device periphery can be selected for the desired bandwidth, while the number of transistors is decided to achieve the isolation.Index Terms-High electron-mobility transistor (HEMT), switch, traveling wave.

show abstract

“…A traveling wave switch using fully distributed FET has been developed and discussed in [2]. [3] demonstrates a switch structure, which has a shunt structure in connection with a quarter wavelength transformer. The switches designed with this type of structure have isolation greater than 25 dB and an insertion loss less than 1.5 dB in the frequency range from 59 GHz to 61 GHz.…”

Section: Introductionmentioning

confidence: 99%

Optimization and fully distributed analysis of traveling wave switches at millimeter wave frequency band

Khoshniyat

Moradi

Abdipour

et al. 2009

2009 First Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT)

View full text Add to dashboard Cite

In this paper, a fully distributed model for a traveling wave switch is introduced and important parameters of the switch such as insertion loss, isolation, and return loss are presented. The results of fully distributed model are compared with the results of the semi-distributed model. These results have good agreement with semi-distributed results. By using the fully distributed model and adjusting the switch length and operating frequency, various switch parameters are calculated. The optimum switch length and operating frequency are calculated versus the switch parameters especially the isolation and the return loss in off and on conditions.

show abstract

A high performance V-band monolithic FET transmit-receive switch

Cited by 31 publications

References 0 publications

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Millimeter-wave MMIC passive HEMT switches using traveling-wave concept

Optimization and fully distributed analysis of traveling wave switches at millimeter wave frequency band

Contact Info

Product

Resources

About