A high performance deep submicron MOSFET structure with self-aligned selectively grown W-gate (SAW)

Abstract

A novel structure for high performance deep submicron MOSFETs, which is called the SAW (Self-Aligned selectively grown W-gate) MOSFET, is proposed. The SAW MOSFET structure has extremely low gate resistance due to the use of tungsten as gate electrode and low source/drain junction capacitance due to the threshold voltage adjustment implantation into channel region only. In order to get a steep subthreshold slope, moderate threshold voltage, and high saturation current, retrograde shaped channel profile are also used.