A high-packing density pixel with punchthrough read-out method for an HDTV interline CCD

Ozaki, Toshifumi; Ono, H.; Tanaka, Haruhiko; Sato, Akira; Nakai, M.; Nishida, Tetsuya

doi:10.1109/16.293340

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Gate-assisted Punchthrough Read-out Mode1

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1995

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Cited by 2 publications

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“…In this read-out mechanism, signalchargesaretransferredf" thedeep PDto the shallow V-CCD diagonally through the bulk TG P-region by the punchthrough effect (8). Generally, punchthrough current is mainly determined by the potential difference between the PDandtheV-CCD.…”

Section: Gate-assisted Punchthrough Read-out Modementioning

confidence: 99%

A 1/4 inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode

Mutoh¹,

Orihara²,

Kawakami³

et al.

Proceedings of IEEE International Electron Devices Meeting

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The authors propose a new cell structure employing a gate-assisted punchthrough read-out mode, which is suitable for a high packing density interline-transfer CCD (IT-CCD) image sensor. The new cell structure, fabricated through the use of high energy ion implantation technology, enables both deep photodiode formation and transfer-gate / channel-stop length reduction. The proposed structure has been applied to a 1/4 inch 380k pixel IT-CCD image sensor with reduced pixel size as small as 4.8 p (H) x 5.6 p (V), which attains a high sensitivity (35 mV/lx) and a large saturation signal (600 mv).

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Section: Gate-assisted Punchthrough Read-out Modementioning

confidence: 99%