A high-linearity SP5T SOI switch with a resistive biasing network and capacitance & resistor compensation technology
Ruiyang Zhang,
Kaixue Ma,
Haipeng Fu
et al.
Abstract:This letter presents a high-linearity single-pole five-throw switch implemented in a 0.13-μm silicon-on-insulator (SOI) CMOS process. In order to improve the linearity of switch, the uniform voltage division across the stacked-FETs is obtained by the proposed structure, which employs a resistive biasing network as well as compensation technology of drain-to-source capacitance and DC balance resistor. The measured input 0.1 dB compression point of the proposed switch is 42 dBm. Insertion losses are 0.38 dB and … Show more
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