2015 International Conference on Embedded Computer Systems: Architectures, Modeling, and Simulation (SAMOS) 2015
DOI: 10.1109/samos.2015.7363670
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A high-level DRAM timing, power and area exploration tool

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Cited by 20 publications
(7 citation statements)
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“…For eight layers, this adds up to 32Gb, thus allowing 32 H-Cubes. The timing, current, and area values of the presented custom 3D DRAM for the 28 nm process with the TSV pitch of 40 μm are extracted from DRAMSpec [20,21], and the exact area dimension of each H-Cube is shown in Fig. 8.…”
Section: Dimensioning the Bcumentioning
confidence: 99%
“…For eight layers, this adds up to 32Gb, thus allowing 32 H-Cubes. The timing, current, and area values of the presented custom 3D DRAM for the 28 nm process with the TSV pitch of 40 μm are extracted from DRAMSpec [20,21], and the exact area dimension of each H-Cube is shown in Fig. 8.…”
Section: Dimensioning the Bcumentioning
confidence: 99%
“…• DRAM Power Model: Since DRAMs contribute significantly to the power consumption of today's systems [9,27], there is a need for accurate power modeling. For our framework we use DRAMPower [4,5], which uses either parameters from datasheets, estimated via DRAMSpec [33] or measurements to model DRAM power. • Thermal Model: 3D packaging of systems like Wide I/O DRAM starts to break down the memory and bandwidth walls.…”
Section: Approximate Drammentioning
confidence: 99%
“…The sorted fault addresses allow us to process BSVG in parallel, so the delay in both the serial and parallel approaches is constant. Note that the delay of BSVG could be hidden within the latency of the column address decoding, which is significantly longer than 1 ns because the BSVG can work independently regardless of the column access [10] in our decoupled design.…”
Section: Performance Evaluationmentioning
confidence: 99%