A high frequency, high efficiency GaN HFET based inductive power transfer system

Cai, Aaron; Pereira, Aaron; Tanzania, Robin; Tan, Yen Kheng; Siek, Liter

doi:10.1109/apec.2015.7104793

Cited by 22 publications

(9 citation statements)

References 21 publications

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“…However, there are challenges facing wireless charging, such as low efficiency compared to plug-in chargers [4]. This is overcome by using wide bandgap semiconductor materials such as GaN, which is attracting attention for enabling high efficiency, high power density converters [7], rectifiers [8] and inverters [9,10]. The material properties of GaN such as high critical field, electron mobility and saturation velocity [11] push the boundaries of power electronics performance such as efficiency, power density, reliability and cost [12].…”

Section: Introductionmentioning

confidence: 99%

Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

Aaron¹,

Siek²

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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This chapter will present the application of the GaN Gate Injection Transistor (GIT) in Inductive Power Transfer (IPT) for Electric Vehicles (EV). IPT provides significant benefits over conventional plug-in chargers but suffers from lower efficiency. A high frequency inverter using GaN GIT, which has low on-resistance and gate charge, is implemented to reduce switching and conduction loss, resulting in higher efficiency. Different gate drive strategies will be compared for driving the GaN GIT at high slew rates while ensuring cross-conduction protection. The switching characteristics of the GaN GIT are studied and the inverter is designed to ensure low switching losses, while keeping overshoot and slew rates under control. Experiment results presented will demonstrate that the system efficiency peaks at 95% at 100 kHz operation and 92% at 250 kHz operation for a coil gap of 80 mm at 2 kW output power.Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors http://dx.doi.org/10.5772/intechopen.76057 125 Half bridge circuit loss modelingThe total losses in a half bridge circuit contains conduction loss, switching loss, ringing loss and dead time loss of the top and bottom power device and is shown in Eq.(3). The subscript top and bot respectively denote the top and bottom power device.

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Section: Introductionmentioning

confidence: 99%

Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

Aaron¹,

Siek²

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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“…Recent work has showcased GaN power transistor application in various power electronics such as high frequency resonant converters [14], low power integrated DC-DC converters [15] and inverter application for wireless power transfer [16], photovoltaic applications [13] and motor driver applications [ The GaN GIT will be applied in the automotive industry, focusing on inductive power transfer for electric vehicles. The weight of the converter is an important requirement for electric vehicles while power transfer efficiency is critical for inductive power transfer.…”

Section: Motivationmentioning

confidence: 99%

“…The system for static wireless charging is as shown in Fig.4-1 [16]. Power drawn from the AC grid is rectified into a DC voltage.…”

Section: Cross Conduction Protectionmentioning

confidence: 99%

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Innovative application and driving of enhancement mode gallium nitride power transistors

Cai¹

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Wide-bandgap semiconductors like Gallium Nitride (GaN) are enabling higher efficiency and greater power density in power electronics. The objective of this work is to develop novel gate drive methods and applications for the proliferation of Enhancement mode (E-mode) GaN power transistors. The challenges of driving enhancement mode GaN devices are identified. Gate drive study is conducted to review the advantages and limitations of various gate drive methods. A 2-stage gate drive is introduced to allow a capacitor-less type gate drive to meet the requirements of the GaN GIT. This is further improved by proposing a 2-stage, 2-phase gate driver to reduce the gate ringing. Simulation is conducted to verify the design and the proposed design demonstrates reduction in gate ringing. A GaN GIT gate driver IC is evaluated against the R-type and RC-type gate driver to demonstrate driving the GaN Gate Injection Transistor (GIT) at high slew rates (~150 V/ns) while having built-in active Miller clamp and self-generated negative voltage rail for cross-conduction protection. This research investigated the application of GaN GIT in Inductive Power Transfer (IPT) for Electric Vehicles (EV). IPT systems provide significant benefits over conventional plug-in chargers. A high frequency inverter using GaN GIT, which have low on-resistance and gate charge, is implemented to

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“…GaN and SiC devices), frequency limit of the devices are increasing rapidly. Recent advancements in semiconductor technologies and research activities [53,[87][88][89][90] suggest high frequency high power devices will be available commercially in near future. Therefore, cost effective, high power near few MHz WPT for high power applications is not very far away, and is around the corner [53].…”

Section: Operating Frequency Selectionmentioning

confidence: 99%

Design and optimization of wireless power transfer system

Sampath¹

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Arokiaswami Alphones, for his invaluable guidance, consistent support and encouragement throughout my research work. I would also wish to express my gratitude to Professor D. Mahinda Vilathgamuwa who was my supervisor during the initial years of my PhD for his valuable support and guidance throughout my research. My appreciation then goes to the staff of the Communication Research Laboratory and Power Electronics Research Laboratory for giving me technical support in my research work. All the fellow research students in the Power Electronics Research Laboratory and Communication Research Laboratory are acknowledged here for their support. I would also like to thank Andrew for all the enjoyable tea time discussions and the camaraderie over the last four years; Namal, Nishsanka, Asiri, Devinda, Kumudu, Chathura, Gamini, Chandana, Dulika and the rest of the Sri Lankan group at NTU for their friendships and supports in difficult times. The research scholarship granted by Nanyang Technological University is gratefully acknowledged. The internship opportunity provided by Kyoto Institute of Technology, Japan is also gratefully acknowledged. I would like to thank my parents for their countless effort and continuous encouragement throughout my academic career. Finally, I would like to express my special appreciation to my wife, Sukitha, for her persistent support encouragement and understanding.

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A high frequency, high efficiency GaN HFET based inductive power transfer system

Cited by 22 publications

References 21 publications

Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

Innovative application and driving of enhancement mode gallium nitride power transistors

Design and optimization of wireless power transfer system

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