A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

Pelk, M.; Neo, W.C.E.; Gajadharsing, John; Pengelly, R.S.; Vreede, L.C.N. de

doi:10.1109/tmtt.2008.924364

Cited by 170 publications

(81 citation statements)

References 20 publications

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“…For the efficiency optimization of our outphasing amplifier, we will assume W-CDMA operation of which PDF can be described by a Rayleigh distribution [19] at a given peak-to-average ratio (PAR) of the signal (7) in which represents the normalized voltage over the load resistor of our total amplifier. To ease our calculations for this efficiency optimization, we first rewrite the expression for the efficiency (6) in terms of the normalized load voltage , which has a square root relation with the normalized output power (8) Using this notation, the average efficiency of the amplifier can be calculated using (7)-(9) [3], [19], [20], [22]. Consequently,…”

Section: A Selection Of the Optimum Compensation Angle For Amplifiermentioning

confidence: 99%

“…At this moment, two basic concepts seems to be favored, namely, supply-voltage modulation-based methods like envelope tracking [1], envelope elimination and restoration (EER), or polar modulation [1]- [5], as well as load modulation-based concepts, with the Doherty amplifier approach as the overall favorite [6]- [8]. Although both concepts can provide excellent efficiency performance [3], [8], practical implementation of these concepts still have their own specific strong and weak points, e.g., the envelope-tracking amplifier can provide a large RF bandwidth, but is limited for its modulation bandwidth due to speed restrictions in the envelope-tracking hardware. In contrast, Doherty amplifiers can provide a large modulation bandwidth, but are more limited in their RF bandwidth, due to the higher complexity of the RF network.…”

mentioning

confidence: 99%

“…However, in spite of their potential, practical outphasing amplifiers are still lacking behind in efficiency performance compared to state-of-the-art envelope tracking [3] or Doherty amplifiers [8].…”

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confidence: 99%

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A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning

Qureshi

Pelk

Marchetti

et al. 2009

IEEE Trans. Microwave Theory Techn.

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116

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Abstract-A 90-W peak-power 2.14-GHz improved GaN outphasing amplifier with 50.5% average efficiency for wideband code division multiple access (W-CDMA) signals is presented. Independent control of the branch amplifiers by two in-phase/quadrature modulators enables optimum outphasing and input power leveling, yielding significant improvements in gain, efficiency, and linearity. In deep-power backoff operation, the outphasing angle of the branch amplifiers is kept constant below a certain power level. This results in class-B operation for the very low output power levels, yielding less reactive loading of the output stages, and therefore, improved efficiency in power backoff operation compared to the classical outphasing amplifiers. Based on these principles, the optimum design parameters and input signal conditioning are discussed. The resulting theoretical maximum achievable average efficiency for W-CDMA signals is presented. Experimental results support the foregoing theory and show high efficiency over a large bandwidth, while meeting the linearity specifications using low-cost low-complexity memoryless pre-distortion. These properties make this amplifier concept an interesting candidate for future multiband base-station implementations.Index Terms-Base station, high-efficiency RF power amplifier, mixed-mode amplifier, outphasing amplifier, wideband code division multiple access (W-CDMA).

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Section: A Selection Of the Optimum Compensation Angle For Amplifiermentioning

confidence: 99%

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confidence: 99%

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A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning

Qureshi

Pelk

Marchetti

et al. 2009

IEEE Trans. Microwave Theory Techn.

Self Cite

116

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“…Making the output currents inphase at the summing point as reported in [21] and [22] may cause over saturation for both the main and the peaking amplifier. The phase differences between input branches of the main and the peaking amplifiers should be corrected as well [23].…”

Section: Analysis Of the Basic Doherty Power Amplifiermentioning

confidence: 99%

Effect of input phase mismatch in Doherty power amplifiers

Aydın

Palamutcuogullari

Yarman

2016

IEICE Electron. Express

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In this paper, a new method is proposed to calculate transconductance ratio of the main and the peaking transistor of a Doherty power amplifier (DPA) which employs output matching circuits and offset lines. Cascade ABCD two-port parameters are used to analyze output section of the DPA. It is shown that output matching circuits has impact on the magnitude and the phase of the transconduction ratio. The effect of the input phase mismatch on the output power and efficiency is analyzed analytically. A 100 W dual drive Gallium Nitride (GaN) Doherty power amplifier is realized to experimentally verify the results. The drain efficiency measured as 68% at the correct phase, 65% for 30°input phase mismatch and 56% for 45°input phase mismatch.

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“…To improve efficiency, many kinds of Doherty power amplifiers have been designed to achieve high efficiency in a wide dynamic range [9][10][11][12]. Furthermore, as one of the most promising semiconductor technique, GaN HEMT has been used for recent power amplifier designs, and it is an ideal choice in order to meet the requirement of wide bandwidth of LTE-Advanced system [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Design of Linearity Improved Asymmetrical Gan Doherty Power Amplifier Using Composite Right/Left-Handed Transmission Lines

Feng¹,

Liu²,

Yu³

et al. 2013

PIER B

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Abstract-A highly efficient asymmetrical GaN Doherty power amplifier using traditional λ/4 transmission line and an asymmetrical GaN Doherty power amplifier (DPA) using composite right/lefthanded transmission lines (CRLH-TL) for linearity improvement are presented in this paper. The CRLH-TL is designed to suppress the second harmonic of the output of the carrier amplifier. This DPA using CRLH-TL is designed for 3.5 GHz LTE-Advanced Application with 100 MHz bandwidth and 37 dBm average output power, the carrier and peaking amplifiers are fabricated with the same 30 W GaN HEMT and unevenly driven in purpose of maintaining high efficiency at back-off power (BOP) region. At 9-dB and 6-dB BOP, the DE achieves 30% and 40.1%, respectively, and the adjacent channel power ratio (ACPR) are less than −37.1 dBc for 40 MHz 16 QAM signal at 37 dBm. In addition, the further linearization of the DPA is realized by using digital predistortion (DPD), the ACPRs are improved to −49.6 dBc for 40 MHz 16 QAM signal. The measured results show linearity improvement compared with the traditional DPA.

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A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

Cited by 170 publications

References 20 publications

A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning

A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning

Effect of input phase mismatch in Doherty power amplifiers

Design of Linearity Improved Asymmetrical Gan Doherty Power Amplifier Using Composite Right/Left-Handed Transmission Lines

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