A high efficiency 0.15 μm 2-mil thick InGaAs/AlGaAs/GaAs V-band power HEMT MMIC

Lai, R.; Nishimoto, M.; Hwang, Y.; Biedenbender, M.; Kasody, B.; Geiger, Craig; Chen, Y.C.; Zell, G.

doi:10.1109/gaas.1996.567874

Cited by 21 publications

(3 citation statements)

References 2 publications

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“…Secondly, the thinner substrate decreases the thermal resistance of the devices, thus resulting in a lower channel operating temperature. More detailed advantages of 2-mil thick via holes as compared to 4-mil thick via holes in GaAs power amplifiers was reported elsewhere [11].…”

Section: 15 µM Gaas Phemt Mmic Technologymentioning

confidence: 99%

Hot Carrier Effect on Power Performance in GaAs PHEMT MMIC Power Amplifiers

Chou

Grundbacher

Lai

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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This paper describes hot electron effects on power performance of GaAs PHEMT MMIC power amplifiers (PAs). Hot electrons are generated in PAs under RF-drive at room temperature. A long-term lifetest of PAs under high hot electron stress was performed to investigate the effect of hot-carrierinduced degradation (HCID) on power performance. Accordingly, an empirical model was developed to predict the power performance of V-band PA modules by the end of life (EOL). This information is crucial for system engineers in order to budget sufficient output power so that system can still maintain performance capability by the EOL.Index Terms -Hot carrier, PHEMT, impact ionization, RFdrive, power amplifiers.

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Section: 15 µM Gaas Phemt Mmic Technologymentioning

confidence: 99%

Hot Carrier Effect on Power Performance in GaAs PHEMT MMIC Power Amplifiers

Chou

Grundbacher

Lai

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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“…A power amplifier with superior performance is needed as a key device in the systems for small size, low weight, and low cost. There are many reports for V-band power amplifiers [2][3][4][5][6][7][8]. They aim to achieve higher power, efficiency, and power gain mainly.…”

Section: Introductionmentioning

confidence: 99%

A V-Band High Power and High Gain Amplifier MMIC using GaAs PHEMT Technology

Chaki

Amasuga

Goto

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We report the performance of a V-band 5-stage high power amplifier MMIC using a millimeter-wave 0.1 μm GaAs pHEMT. It has demonstrated that an output power of 28.8 dBm (759 mW) at 1 dB compression point with 17.8 dB power gain and 14.2% PAE at 59 GHz. And it delivers an output power of 28.9 dBm (776 mW) at a saturation point. These results represent, to the best of our knowledge, the highest output power and power gain for single-ended MMICs.

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“…When we combine multiple device cells to provide a large output power, the effects of the reduced source inductance will become more pronounced. The use of multiple via holes can also significantly reduce the thermal resistance of the devices [11]. The InGaAs/AlGaAs/GaAs PHEMTs used in this study were fabricated by TRANSCOM, Inc.…”

Section: Introductionmentioning

confidence: 99%

Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates

Huang

Chang

et al. 2005

Micro & Optical Tech Letters

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ABSTRACT:A fully matched Ka-band INTRODUCTIONLow cost, light weight, high yield, and good reliability are key issues for the successful development of missile seekers, electronic warfare, smart munitions, and commercial point-to-point communication applications. With the maturing of pseudomorphic highelectron-mobility transistor (PHEMT) technology, monolithic millimeter-wave integrated circuit (MMIC) high-power amplifiers (HPAs) can offer all the above benefits. These PHEMT MMIC HPAs have also generated considerable interest in the electronicpower community in recent years. On the other hand, the demand for broadband-data distribution has increased significantly. As lower frequency bands become saturated, communication providers are now focusing on the Ka band for next-generation terrestrial systems, such as satellite communication systems, wireless local area networks (LANs), local multipoint distribution system (LMDS), personal communications network links, and digital radio. As a result, research activities in Ka-Band HPAs have also increased significantly in recent years [1][2][3][4][5]. Ka-band terrestrial systems require HPAs with compact size and high reliability. These HPAs also need to be mass producible in order to reduce the cost. Although traveling-wave tube amplifiers (TWTAs) can be used in Ka-band terrestrial systems, solid-state power amplifiers (SSPAs) are less expensive, smaller in size, lighter in weight, and more reliable. Indeed, the performances of GaAs-based PHEMT microwave monolithic integrated HPAs have been drastically improved in the past decade. In fact, GaAs-based PHEMTs have already been extensively used as SSPAs in Ka-band terrestrial systems. As the performances of GaAs-based PHEMTs are further improved, these devices will continue to offer significant performance enhancements for applications in satellite and ground-based communication systems. To reduce the production cost of Ka-band HPAs, we can use lumped-element matching circuits to miniaturize the size of GaAs-based MMIC chips. On the other hand, we can use multistage configurations to achieve large output power. However, the circuit complexity increases significantly as the number of amplifier stages increases. It should be noted, however, that conventional GaAs-based PHEMTs have been fabricated on 4-mil-thick GaAs substrates [6 -8]. Recent development of the 2-mil-thick GaAs PHEMT fabrication technology has made it possible to pack more power within the same device periphery and to provide a lower production cost without sacrificing the device performance. This article describes the design, fabrication, and testing of Ka-band HPAs using lumped-element matching circuits and 2-mil-thick GaAs PHEMT fabrication technology. The proposed two-stage AlGaAs/InGaAs/GaAs PHEMT MMIC [9,10] HPA delivers a 1-W output and a linear power gain larger than 10 dB in the frequency range between 30 and 37 GHz. This amplifier is designed to fully match 50⍀ input and output impedances without any external circuit. Figure 1 shows the designed tw...

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A high efficiency 0.15 μm 2-mil thick InGaAs/AlGaAs/GaAs V-band power HEMT MMIC

Cited by 21 publications

References 2 publications

Hot Carrier Effect on Power Performance in GaAs PHEMT MMIC Power Amplifiers

Hot Carrier Effect on Power Performance in GaAs PHEMT MMIC Power Amplifiers

A V-Band High Power and High Gain Amplifier MMIC using GaAs PHEMT Technology

Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates

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