A Hierarchical Sensing Scheme (HSS) Of High-density And Low-voltage Operation SRAMs

Abstract

This paper proposes a new hicrarchical sensing scheme (HSS) that realizes stability in READ/WRITE operation for a small SRAM memory cell. By adopting the HSS, highdensity and low-voltage operation SRAMs with a small diesize, which is suitable for mobile multi-media devices, can be realized. The HSS makes best use of Cb/Cs relation in the circuit design. The simulation show that the HSS SRAM functions satisfactory with a cell ratio of 1.5 (< 50% of conventional) at Vcc = 3V and 2.5 at Vcc = 1.8V. 1, Introduct ionAs portable machinery such as handy terminals and lap-top Address I I Bit Line Pre-Charge (m U Word Line (WL) Segment Select (SS) Sense1 Sense2 (a) Read Cycle Address I X