A heterogeneous III-V / Si3N4 quantum photonic integration platform

Abstract

Single quantum emitters are an important resource for photonic quantum technologies, constituting building blocks for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of such functions is achieved through systems that provide both strong light-matter interactions and a low-loss interface between emitters and optical fields. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we develop a heterogeneous photonic integration platform that provides such capabilities in a scalable on-chip implementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots -a mature class of solidstate quantum emitter -with low-loss Si 3 N 4 waveguides. We demonstrate a highly efficient optical interface between Si 3 N 4 waveguides and single quantum dots in GaAs geometries, with performance approaching that of devices optimized for each material individually. This includes quantum dot radiative rate enhancement in microcavities, and a path for reaching the non-perturbative strong coupling regime.

Capillary-driven elastic attraction between quantum dots

“…Quantum dots (QD) were first investigated almost three decades ago for their potential applications in microelectronics [1][2][3] Recently a renewed interest has been driven in quantum molecules and quantum dots arrays due to local field interactions between interconnected primitive nanoscale logic blocks that could allow to transfer and process digital information 4 . QDs are now commonly manufactured by different techniques, from colloidal synthesis, lithography, 3D printing to epitaxy, and are used for many different purposes in fundamental systems, such as in quantum photonics, lasing or excitonic systems [5][6][7][8][9][10][11][12][13][14][15][16] , and in commercial devices such as screen displays or memories [17][18][19][20][21][22] . Recently with the renewed interest in quantum dots based quantum information [23][24][25] it has become highly challenging to self-organize limited assemblies of laterally close packed quantum dots [26][27][28][29][30][31][32] .…”

Numerical Investigation of Light Emission from Quantum Dots Embedded into On‐Chip, Low‐Index‐Contrast Optical Waveguides

“…With this, we expect further enhancement possibilities of β xy through additional lateral structuring, and through usage of dedicated SPS with directed emission properties. [34] This investigation serves for the design of integrated waveguides [19,[34][35][36] and also allows to estimate deviations from optimum coupling values due to fabrication tolerances. This will help optimizing the performance of compact optical devices with integrated, efficient SPS, which will pave the way for integrated quantum information processing.…”

Laser Writing of Color Centers

“…[40,41] Exploring new color center systems has been spurred to pursue novel quantum functionalities, as sketched in Figure 1. A large number of systems, such as bulk crystal materials, [42][43][44][45][46] quantum dots (QDs), [47][48][49][50] single-walled carbon nanotubes, [51,52] 2D layered materials, have been reported as host of quantum emitters. [53][54][55] Each host has shown its distinct set of properties and quantum functionality.…”