A heat balanced sigma–delta uncooled bolometer

Denoual, Matthieu; Brouard, D.; Veith, A.; Sagazan, Olivier de; Pouliquen, Mathieu; Attia, Patrick; Lebrasseur, Éric; Mita, Yoshio; Allègre, G

doi:10.1088/0957-0233/25/6/065101

Cited by 11 publications

(5 citation statements)

References 15 publications

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“…An example of scheme (b) is a matrix of resistive microbolometer pixels associated with conditioning and specific control electronics for heat feedback. 31,32) Resistive bolometers are infrared detectors within the thermal type category. 33) Their operating principle is based on the measurement of temperature variations of pixels, which adsorb incoming infrared power, using a thermistor.…”

Section: Free-standing Cmos Structure Of Bulk Simentioning

confidence: 99%

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Opportunities of CMOS-MEMS integration through LSI foundry and open facility

Mita¹,

Lebrasseur²,

Okamoto³

et al. 2017

Jpn. J. Appl. Phys.

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Since the 2000s, several countries have established micro- and nanofabrication platforms for the research and education community as national projects. By combining such platforms with VLSI multichip foundry services, various integrated devices, referred to as “CMOS-MEMS”, can be realized without constructing an entire cleanroom. In this paper, we summarize MEMS-last postprocess schemes for CMOS devices on a bulk silicon wafer as well as on a silicon-on-insulator (SOI) wafer using an open-access cleanroom of the Nanotechnology Platform of MEXT Japan. The integration devices presented in this article are free-standing structures and postprocess isolated LSI devices. Postprocess issues are identified with their solutions, such as the reactive ion etching (RIE) lag for dry release and the impact of the deep RIE (DRIE) postprocess on transistor characteristics. Integration with nonsilicon materials is proposed as one of the future directions.

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Section: Free-standing Cmos Structure Of Bulk Simentioning

confidence: 99%

“…This paper is an extended version of a paper presented in a symposium, "Innovation from Open Facilities", of the MNC2016 conference. 22) Our purpose is to show the opportunities that the CMOS-MEMS coprocess technologies can provide to the community with several examples through microsensor device realizations.…”

Section: Introductionmentioning

confidence: 99%

Opportunities of CMOS-MEMS integration through LSI foundry and open facility

Mita¹,

Lebrasseur²,

Okamoto³

et al. 2017

Jpn. J. Appl. Phys.

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“…Future work will derive the device into resonant thermal devices with the capacitively coupled electrical feedback [11] to enable real-time monitoring of the thermal mass.…”

Section: B Zeolitesmentioning

confidence: 99%

“…The target gas is characterized by its specific heat capacity and when adsorbed onto a microstructured device induces thermal mass variation. The proposed thermal gas sensor includes a metallic resistor that is used to monitor the temperature and to produce heat as in [11]. The thermal system submitted to heat stimulation reacts with different time constants according to the gas adsorption.…”

Section: Introductionmentioning

confidence: 99%

Microfabricated test structures for thermal gas sensor

Denoual¹,

Pouliquen²,

Robbes³

et al. 2016

2016 International Conference on Microelectronic Test Structures (ICMTS)

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“…3,4) Using microactuators, the system not only can passively convert outside information to electrical signals but also can actively give back reactions. Such active operation not only enhances the sensitivity and or bandwidth of MEMS sensors 5,6) but it has also led to the development of new application such as optical, [7][8][9] radio frequency (RF), 10) and display devices. 11) A typical block diagram for MEMS actuator operation is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Progress and opportunities in high-voltage microactuator powering technology towards one-chip MEMS

Mita

Hirakawa

Stefanelli

et al. 2018

Jpn. J. Appl. Phys.

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In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, which is more than 10 V, and is often over 100 V) for operation. We experimentally and theoretically demonstrated that the main reason why MEMS actuators need such HV is the tradeoff between resonant frequency and displacement amplitude. Indeed, the product of frequency and displacement is constant regardless of the MEMS design, but proportional to the input energy, which is the square of applied voltage in an electrostatic actuator. A comprehensive study on the principles of HV device technology and associated circuit technologies, especially voltage shifter circuits, was conducted. From the viewpoint of on-chip energy source, series-connected HV photovoltaic cells have been discussed. Isolation and electrical connection methods were identified to be key enabling technologies. Towards future rapid development of such autonomous devices, a technology to convert standard 5 V CMOS devices into HV circuits using SOI substrate and a MEMS postprocess is presented. HV breakdown experiments demonstrated this technology can hold over 700 to 1000 V, depending on the layout.

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A heat balanced sigma–delta uncooled bolometer

Cited by 11 publications

References 15 publications

Opportunities of CMOS-MEMS integration through LSI foundry and open facility

Opportunities of CMOS-MEMS integration through LSI foundry and open facility

Microfabricated test structures for thermal gas sensor

Progress and opportunities in high-voltage microactuator powering technology towards one-chip MEMS

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