A&gt;400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technology

Lee, Q.; Agarwal, B.; Mensa, D.; Pullela, R.; Guthrie, James; Samoska, Lorene; Rodwell, M.J.W.

doi:10.1109/55.661170

Cited by 64 publications

(15 citation statements)

References 7 publications

(12 reference statements)

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“…Fig. 17 shows a device de¯ned by optical lithography 41 . Figure 18 shows HBT emitterbase and collector-base junctions de¯ned by electron-beam lithography.…”

Section: Device Resultsmentioning

confidence: 99%

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

Rodwell

Urteaga

Betser

et al. 2001

Int. J. Hi. Spe. Ele. Syst.

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High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. Narrow collector junctions can be obtained by using substrate transfer processes, or -if contact resistivity is greatly reduced -by reducing the width of the base Ohmic contacts in a mesa structure. HBTs with submicron collector junctions exhibit extremely high f max and high gains in mm-wave ICs. Logic gate delays are primarily set by depletion-layer charging times, and neither fτ nor f max is indicative of logic speed. For high speed logic, epitaxial layers must be thinned, emitter and collector junction widths reduced, current density increased, and emitter parasitic resistance decreased. Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz. If extrapolated at -20 dB/decade, the power gain cutoff frequency f max is 1.1 THz. Transferred-substrate HBTs have obtained 295 GHz f τ . Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz, 66 GHz master-slave flip-flops, and 18 GHz clock rate Δ-Σ ADCs.

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“…Fig. 17 shows a device de¯ned by optical lithography 41 . Figure 18 shows HBT emitterbase and collector-base junctions de¯ned by electron-beam lithography.…”

Section: Device Resultsmentioning

confidence: 99%

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

Rodwell

Urteaga

Betser

et al. 2001

Int. J. Hi. Spe. Ele. Syst.

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“…T HE ongoing need for improved speed and density in highperformance multifunctional electronics has motivated extensive research into the transfer and bonding of electronic and optoelectronic devices to host substrates, including silicon [1]- [5]. Hybrid thin film integration of III-V devices onto CMOS circuitry is a promising technique which has been successfully applied to optoelectronic circuits, allowing each component to be independently optimized with proven technologies at relatively low cost [6]- [8].…”

Section: Introductionmentioning

confidence: 99%

RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits

Bergman

Chang

Joo

et al. 1999

IEEE Electron Device Lett.

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Abstract-The combination of resonant tunneling diodes (RTD's)and complementary metal-oxide-semiconductor (CMOS) silicon circuitry can offer substantial improvement in speed, power dissipation, and circuit complexity over CMOSonly circuits. We demonstrate the first integrated resonant tunneling CMOS circuit, a clocked 1-bit comparator with a device count of six, compared with 21 in a comparable all-CMOS design. A hybrid integration process is developed for InP-based RTD's which are transferred and bonded to CMOS chips. The prototype comparator shows sensitivity in excess of 10 6 V/A, and achieves error-free performance in functionality testing. An optimized integration process, under development, can yield high-speed, low power circuits by lowering the high parasitic capacitance associated with the prototype circuit.

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“…The ongoing need for improved speed and density in high-performance multifunctional electronics has motivated extensive research into the transfer and bonding of electronic and optoelectronic devices to host substrates, including silicon [1][2][3][4][5]. Hybrid thin-film integration of III-V devices onto CMOS circuitry is a promising technique which has been successfully applied to optoelectronic circuits, allowing each component to be independently optimized with proven technologies at relatively low cost [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff

Brar¹,

Moise²

1999

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A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technology

Cited by 64 publications

References 7 publications

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits

Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff

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