A grease for domain walls motion in HfO<sub>2</sub>-based ferroelectrics

Kashir, Alireza; Farahani, Mehrdad Ghiasabadi; Lančok, J.; Hwang, Hyunsang; Kamba, S.

doi:10.1088/1361-6528/ac4679

Cited by 8 publications

(4 citation statements)

References 39 publications

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“…Recently, Kashir et al observed a substantial decrease in E C upon the introduction of tetragonal‐like domain walls. [ 405 ] A considerable increase in dielectric permittivity at domain walls confirmed the higher mobility, which was supposed to be the cause of the reduction in E C . [Correction added after publication 09 June 2022: Figure 20 changed to Figure 21 in preceding paragraph]…”

Section: Challenges Of Hfo2 In Emerging Nonvolatile Memory Devicesmentioning

confidence: 99%

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high‐speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high‐density memory and neuromorphic devices are examined, and the various challenges of HfO2‐based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

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Section: Challenges Of Hfo2 In Emerging Nonvolatile Memory Devicesmentioning

confidence: 99%

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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116

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“…These simulations inspired the synthesis of alternating polar/nonpolar Hf 0.5 Zr 0.5 O 2 /ZrO 2 nanolaminates where formation of a nonpolar phase at domain walls acts as a “grease” to increase domain‐wall mobility, ultimately resulting in a 40% decrease in the coercive field. [ 334 ] Further work combining theory and experiment on these unconventional ferroelectrics will be essential in addressing problems of high coercive fields and poor fatigue resistance typical of ferroelectric HfO 2 ‐ and ZrO 2 ‐based materials, yet the demonstration of switchable polarization in a material amenable to current industry processes is promising for its near‐future integration into novel ferroelectric devices.…”

Section: New Materials and Epitaxymentioning

confidence: 99%

Thin‐Film Ferroelectrics

et al. 2022

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non-centrosymmetric structures which can possess a spontaneous electric polarization which can be controlled using applied electric fields (Figure 1). Ferroelectrics themselves are inherently hierarchical materials-wherein picometer ionic displacements give rise to polarization which can collectively extend over millimeters or self-organize into complex mesoscopic structures or collectively reorient under applied stimuli (e.g., electric fields, temperature, or stress). Understanding these complex behaviors necessitates a multilevel approach, wherein atomistic, microscopic, mesoscopic, and macroscopic properties are studied in concert. Parallel advances in synthesis, characterization, and simulation have enabled such multimodal studies and provided a methodology through which a multitude of ferroelectric functionalities can now be achieved and studied.The promise of utilizing these functionalities in a number of applications kick-started the modern era of ferroelectric research in the mid-20th century. [1] Looking further back, in the 1920s, the ability to switch the polarization of sodium potassium tartrate tetrahydrate (commonly known as Rochelle salt) was first observed, along with dielectric and piezoelectric anomalies near the ferroelectric transition-now called the Curie point. In the 1940s, as part of the accelerated research push associated with World War II, ferroelectric BaTiO 3 was discovered by accident. When modifying TiO 2 with BaO to enhance its dielectric properties, a record-high dielectric permittivity was discovered and subsequent studies demonstrated a hysteretic switchable polarization. This discovery ushered in a new understanding of ferroelectricity as more than a rare phenomenon associated with salts that contained hydrogen bonding, but rather as a phenomenon that could exist in simple oxides like perovskites. Over the subsequent decades, the number of ferroelectric compositions exploded, particularly within the perovskite oxides, introducing new chemistries including LiNbO 3 and the PbZr x Ti 1−x O 3 system. Meanwhile, theoretical descriptions of ferroelectricity were advanced through lattice-dynamical models invoking a soft-mode optical phonon. Studies of the piezoelectric, thermodynamic, and optical properties in ferroelectric ceramics allowed for their deployment in a number of applications including piezoelectric sensors and pyroelectric infrared detectors. By the 1960s, increased interest in using ferroelectric polarization for nonvolatile memory was driving research into Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length sc...

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“…It is possible to change the polarization direction, thus maintaining quasi-chirality at the interface between the o-phase and t-phase owing to the effect of the topological domain wall [11]. Therefore, the existence of ultra-thin t-phase like spacer in ferroelectric films is a key to the reduction of the switching barrier without causing a detrimental degradation of polarization properties [12].…”

Section: Introductionmentioning

confidence: 99%

Improvement of endurance and switching speed in Hf_1−xZr _x O₂ thin films using a nanolaminate structure

Jang¹,

Kashir²,

Oh³

et al. 2022

Nanotechnology

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To improve the endurance and polarization switching speed of Hf1-xZrxO2 (HZO) ferroelectric films, we designed a 10-nm Hf0.5Zr0.5O2 + ZrO2 (HZZ) nanolaminate structure. Three films with different ZrO2 interlayers thicknesses were compared to find the optimal condition to implement the effect of the topological domain wall which was proposed recently. The HZZ film were deposited by repeatedly stacking ten HZO (~0.92 nm) and six ZrO2 (~0.53 nm) layers; they exhibited a dramatic reduction of coercive field without an effective loss of remnant polarization. The endurance at operation voltage increased by more than 100 times compared with that of the solid solution HZO film, and the switching speed was increased by more than two times. The formation of the tetragonal phase-like spacer between the ferroelectric polar regions appears to be the main factor associated with the reduction of the switching barrier and leads to the acceleration of the switching propagation over multiple domains.

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A grease for domain walls motion in HfO₂-based ferroelectrics

Cited by 8 publications

References 39 publications

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Thin‐Film Ferroelectrics

Improvement of endurance and switching speed in Hf_1−xZr _x O₂ thin films using a nanolaminate structure

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A grease for domain walls motion in HfO2-based ferroelectrics

Cited by 8 publications

References 39 publications

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Thin‐Film Ferroelectrics

Improvement of endurance and switching speed in Hf1−x Zr x O2 thin films using a nanolaminate structure

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A grease for domain walls motion in HfO₂-based ferroelectrics

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Improvement of endurance and switching speed in Hf_1−xZr _x O₂ thin films using a nanolaminate structure