2018
DOI: 10.1039/c8nr00158h
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A graphene/single GaAs nanowire Schottky junction photovoltaic device

Abstract: A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-… Show more

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Cited by 68 publications
(31 citation statements)
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“…At zero bias, the photodetector exhibits an ≈3.5 × 105 high light on/off ratio and a photoresponse time of 82 µs, which indicates that the CdSe/graphene Schottky junction has a good application prospect as a self‐powered photodetector. Luo et al fabricated a graphene/single GaAs nanowire Schottky junction photovoltaic device by covering single‐layer graphene on an n‐doped GaAs nanowire. The device has a high photoresponsivity of 231 mA W −1 and a fast photoresponse/recovery time of 85/118 µs at zero bias under 532 nm laser excitation.…”
Section: D Material‐based Schottky Junction Photodetectorsmentioning
confidence: 99%
“…At zero bias, the photodetector exhibits an ≈3.5 × 105 high light on/off ratio and a photoresponse time of 82 µs, which indicates that the CdSe/graphene Schottky junction has a good application prospect as a self‐powered photodetector. Luo et al fabricated a graphene/single GaAs nanowire Schottky junction photovoltaic device by covering single‐layer graphene on an n‐doped GaAs nanowire. The device has a high photoresponsivity of 231 mA W −1 and a fast photoresponse/recovery time of 85/118 µs at zero bias under 532 nm laser excitation.…”
Section: D Material‐based Schottky Junction Photodetectorsmentioning
confidence: 99%
“…It can be speculated that there is still large room for improvement by optimizing graphene and the interface quality. As the photodiode shares similar working mechanism with the solar cell, a series of other 1D nanomaterials has also been combined with graphene for GR‐1D MDWs solar cells, such as GaAs nanowires, CdS nanowires, and CdSe nanobelts . But the PCE in these structures remains very low, further optimization of the performance will be needed.…”
Section: Gr‐based Mixed‐dimensional Structure For Optoelectronicsmentioning
confidence: 99%
“…c) Optical photograph of GR‐1D GaAs nanowire Schottky junction solar cell. Reproduced with permission . Copyright 2018, Royal Society of Chemistry.…”
Section: Gr‐based Mixed‐dimensional Structure For Optoelectronicsmentioning
confidence: 99%
“…The above discussed methods are the common techniques for growth of nanowires, but there have also been reports of various improvements on existing techniques to show high efficiencies. MOCVD was used to report a PCE of 8.8% in graphene/single nanowire Schottky junction solar cell [339,340]. Nanowire solar cells with efficient light management has the capability to outperform their bulk counterparts both in efficiency and cost.…”
Section: Fabrication Techniquesmentioning
confidence: 99%