2010
DOI: 10.1109/tmtt.2010.2050379
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A Global Approach for Modeling and Analysis of Edge-Coupled Traveling-Wave Terahertz Photoconductive Sources

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Cited by 20 publications
(19 citation statements)
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“…Acceleration of these photogenerated carriers by the built-in field is also modulated by the same frequency− i.e., E (x, y, t) = E (x, y) e jωt triggers radiation of the desired CW THz wave, in the absence of an external applied bias. Using the same procedure as reported in [19,20], in order to model the optical generation, we initially obtain the intensity distribution from the time-averaged Poynting vector. In simulating the optical characteristics of the individual Emitter structure, we used absorbing boundary conditions at all sides of the simulation domain.…”
Section: Cw Operation Of Thz Photomixer Emittersmentioning
confidence: 99%
“…Acceleration of these photogenerated carriers by the built-in field is also modulated by the same frequency− i.e., E (x, y, t) = E (x, y) e jωt triggers radiation of the desired CW THz wave, in the absence of an external applied bias. Using the same procedure as reported in [19,20], in order to model the optical generation, we initially obtain the intensity distribution from the time-averaged Poynting vector. In simulating the optical characteristics of the individual Emitter structure, we used absorbing boundary conditions at all sides of the simulation domain.…”
Section: Cw Operation Of Thz Photomixer Emittersmentioning
confidence: 99%
“…The drift-diffusion model can explain physical phenomena such as optical generation of carriers and currents, and the field-screening effect. In addition, this model is sufficiently simple and therefore needs far less computational time as compared to other models [17].…”
Section: B Carrier Transport Modelmentioning
confidence: 99%
“…Substituting the current equations into the continuity equations from a set of the drift-diffusion equations, one can obtain three partial differential equations with the dependent variables of , and as follows [17]:…”
Section: B Carrier Transport Modelmentioning
confidence: 99%
“…For the net recombination rate in the drift-diffusion model, the Shockley-Read-Hall (SRH) and Auger processes are considered [17].…”
Section: B Modeling Of Optical Carrier Generation and Carriermentioning
confidence: 99%
“…In this regard, along the outer (non-contact) edges of devices, homogeneous (reflecting) Neumann boundary conditions are imposed so that current only flows out of the device through the contacts. In the absence of surface charge along such edges, the normal electric field component becomes zero [17]. At the interface of the metal and semiconductor, the boundary condition for the Schottky contact is based largely on the approach introduced by Crowell and Sze [18].…”
Section: B Modeling Of Optical Carrier Generation and Carriermentioning
confidence: 99%