2011
DOI: 10.1016/j.jallcom.2011.08.056
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A giant polarization value in bismuth ferrite thin films

Yuanyu Wang
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Cited by 12 publications
(3 citation statements)
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References 24 publications
(44 reference statements)
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“…This coupling provides an additional opportunity for the design of magnetoelectric and spintronic devices [2][3][4]. Multiferroic materials have gained tremendous attention on account of their potential applications in various fields, such as bubble memory device, microwave, satellite communication, audio-video, digital recording [4,5], sensor, multiple state memory element, electro-ferromagnetic resonance  device [6], thin film capacitor, non-volatile memory [7], optoelectronics, solar energy device [4], highdensity ferroelectric magnetic random access memory [8], and permanent magnet [9]. A multifunctional BiFeO 3 compound demonstrates a magnetoelectric coupling having Curie temperature T C ≈ 1100 K and G-type antiferromagnetism temperature T N ≈ 640 K [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…This coupling provides an additional opportunity for the design of magnetoelectric and spintronic devices [2][3][4]. Multiferroic materials have gained tremendous attention on account of their potential applications in various fields, such as bubble memory device, microwave, satellite communication, audio-video, digital recording [4,5], sensor, multiple state memory element, electro-ferromagnetic resonance  device [6], thin film capacitor, non-volatile memory [7], optoelectronics, solar energy device [4], highdensity ferroelectric magnetic random access memory [8], and permanent magnet [9]. A multifunctional BiFeO 3 compound demonstrates a magnetoelectric coupling having Curie temperature T C ≈ 1100 K and G-type antiferromagnetism temperature T N ≈ 640 K [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, these multiferroic materials are of immense interest due to their applicability in the several fields. These includes information storage applications such as: nonvolatile, multiple state and ferroelectric random access memories; sensor applications which includes: spintronics and magnetoelectrics; applications in communications such as: radio, microwave, satellite communication and digital recording [5][6][7][8][9][10]. It also finds use in nonlinear optics, photoelectrochemical cell, high density thin film capacitor, electric field controlled ferromagnetic resonance devices and permanent magnet applications [11,12].…”
Section: Introductionmentioning
confidence: 99%
“…The effects of Zn dopant on structural, electrical, and magnetic properties for BFO thin films have been reported. [15][16][17] The reports demonstrated that the introduction of Zn is an effective way to enhance the ferroelectric behavior of BFO films. However, the effects of Zn doping on the optical properties for BFO nanoparticles have seldom been reported.…”
mentioning
confidence: 99%