“…This coupling provides an additional opportunity for the design of magnetoelectric and spintronic devices [2][3][4]. Multiferroic materials have gained tremendous attention on account of their potential applications in various fields, such as bubble memory device, microwave, satellite communication, audio-video, digital recording [4,5], sensor, multiple state memory element, electro-ferromagnetic resonance device [6], thin film capacitor, non-volatile memory [7], optoelectronics, solar energy device [4], highdensity ferroelectric magnetic random access memory [8], and permanent magnet [9]. A multifunctional BiFeO 3 compound demonstrates a magnetoelectric coupling having Curie temperature T C ≈ 1100 K and G-type antiferromagnetism temperature T N ≈ 640 K [10,11].…”