A GHz‐level memristor emulator with only MOSFET

Abstract

SummaryThe MOS‐only memristor only uses the transistor's intrinsic capacitance to realize the memristor's memory effect, which is beneficial to increase its operating frequency and reduce its occupied chip area. This paper proposes a GHz‐level MOS‐only memristor emulator (i.e., PGME and NGME). PGME/NGME consists of three/four MOSFETs without any external elements and power supplies. The operating frequency of PGME/NGME is high up to 5 GHz. When the three/four MOSFETs in PGME are pch_hvts of TSMC's 65‐nm process, the occupied chip areas of PGME‐3, PGME‐4A, and PGME‐4B are 3.9 ∗ 2.7 m2, 4.3 ∗ 3.3 m2, and 4.3 ∗ 4.4 m2, respectively. The minimum step time of material implication circuit based on PGME‐3 and NGME‐3 is only 70 ps. Additionally, a chaotic oscillator circuit based on PGME‐4A is presented and verified with discrete p‐channel MOSFETs of CD4007.