A geometric explanation of the temperature dependence of the quantised Hall resistance

Wel, W. van der; Harmans, C.J.P.M.; Mooij, J. E.

doi:10.1088/0022-3719/21/7/003

Cited by 33 publications

(12 citation statements)

References 12 publications

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“…The deviation of the resistance plateaus from precise quantization is caused by the large bias current and the wide, extended Hall voltage contacts in our device ( Fig. 2a), which mix a significant fraction of the longitudinal resistance into the Hall resistance 35 . The Hall coefficient R H = I −1 (∂V H /∂B) ( Fig.…”

Section: Resultsmentioning

confidence: 92%

Magnetic field detection limits for ultraclean graphene Hall sensors

et al. 2020

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Solid-state magnetic field sensors are important for applications in commercial electronics and fundamental materials research. Most magnetic field sensors function in a limited range of temperature and magnetic field, but Hall sensors in principle operate over a broad range of these conditions. Here, we evaluate ultraclean graphene as a material platform for highperformance Hall sensors. We fabricate micrometer-scale devices from graphene encapsulated with hexagonal boron nitride and few-layer graphite. We optimize the magnetic field detection limit under different conditions. At 1 kHz for a 1 μm device, we estimate a detection limit of 700 nT Hz −1/2 at room temperature, 80 nT Hz −1/2 at 4.2 K, and 3 μT Hz −1/2 in 3 T background field at 4.2 K. Our devices perform similarly to the best Hall sensors reported in the literature at room temperature, outperform other Hall sensors at 4.2 K, and demonstrate high performance in a few-Tesla magnetic field at which the sensors exhibit the quantum Hall effect.

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Section: Resultsmentioning

confidence: 92%

Magnetic field detection limits for ultraclean graphene Hall sensors

et al. 2020

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“…2(b)]. Similar anomalous “overshoot” of the quantized value for the Hall resistance can sometimes be seen in the QH effect when the current splits between multiple (evanescent) incompressible strips of different filling factors that are narrower than the Fermi wavelength [43], or when geometric effects lead to mixing of ρ xx into ρ yx [44]. The former case has no clear analog in QAH, where a single edge state is predicted.…”

Section: Quantization Of the Hall Resistancementioning

confidence: 92%

Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect

et al. 2018

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In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating two-dimensional bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic current comparator system, we measure quantization of the Hall resistance to within one part per million and, at lower current bias, longitudinal resistivity under 10 mΩ at zero magnetic field. Increasing the current density past a critical value leads to a breakdown of the quantized, low-dissipation state, which we attribute to electron heating in bulk current flow. We further investigate the prebreakdown regime by measuring transport dependence on temperature, current, and geometry, and find evidence for bulk dissipation, including thermal activation and possible variable-range hopping.

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“…This confirms that the ultra-low step heights are beneficial for electronic transport [16,17] and ideal to electronic device applications. Taking into account that the Hall voltage drop occurs between the diagonally opposing corners of a Hall contact pair [44] one can calculate from the ρ xx values and the geometry of the contacts an upper limit [45] for the deviation from R K /2 of the Hall resistance (see methods). The upper limit was determined for each of the three pairs of directly opposing potential contacts ( figure 4(a)).…”

Section: Enhanced Buffer Layer Nucleation From Graphite Nanocrystalsmentioning

confidence: 99%

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

et al. 2016

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We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultrasmooth defect-and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices. Main TextThe success of graphene as a basis for new applications depends crucially on the reliability of the available technologies to fabricate large areas of homogenous high quality graphene layers. Epitaxial growth on metals as well as on SiC substrates is employed with specific benefits and drawbacks.Single graphene layers epitaxially grown on SiC offer a high potential for electronic device applications. They combine excellent properties, e.g. high electron mobilities, with the opportunity for wafer-scale fabrication and direct processing on semi-insulating substrates without the need to transfer the graphene to a suitable substrate (Avouris & Dimitrakopoulos 2012). Some progress has been achieved during the recent years. In particular, high temperature sublimation growth under Ar atmosphere (Virojanadara et al. 2008),(Emtsev et al. 2009 or by confinement control (Heer et al. 2011), (Real et al. 2012) was a breakthrough for synthesizing large-area graphene on SiC substrates.The coverage of graphene bilayers could be reduced from wide stripes formed along the terraces to small micrometer-sized bilayer patches (Virojanadara et al. 2009). Further it was found that beyond pure sublimation growth from SiC graphene formation can be assisted by additional carbon supply from external sources (Al-Temimy et al. 2009;Moreau et al. 2010). In particular, by using propane in

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A geometric explanation of the temperature dependence of the quantised Hall resistance

Cited by 33 publications

References 12 publications

Magnetic field detection limits for ultraclean graphene Hall sensors

Magnetic field detection limits for ultraclean graphene Hall sensors

Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

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