A Genetic Algorithm Approach to InGaP/GaAs HBT Parameters Extraction and RF Characterization

Li, Yiming; Cho, Yen-Yu; Wang, Chuansheng; Huang, Kuen-Yu

doi:10.7567/ssdm.2002.p11-7

Cited by 7 publications

(10 citation statements)

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“…For multi LTPS TFTs, development of advanced compact model and corresponding parameter optimization technique are the most important issues. We are currently working on intelligent optimization algorithms [8,9] for LTPS TFT parameter extraction.…”

Section: Discussionmentioning

confidence: 99%

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A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors

2004

J Comput Electron

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A unified physical-based model parameter extraction technique for excimer laser annealed lower temperature polycrystalline silicon (LTPS) complementary thin film transistors (TFTs) is for the first time proposed. For two well-known compact models of LTPS TFT, Rensselaer Polytechnic Institute (RPI) V1 and V2 models, our approach sequentially optimizes the model parameters in the regions of linear, subthreshold, saturation, and leakage. Compared with the measured results, the extracted I D − V G , I D − V D , transconductance, and output conductance are within 3% of accuracy. The agreement with the experimental data is excellent for the n-and p-type LTPS TFTs with different length and width. This extraction technique bridges the fabrication of LTPS TFTs and the design of complementary system on panel circuits.

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Section: Discussionmentioning

confidence: 99%

“…Based on the physical properties of the LTPS TFTs and the mathematical behaviors of the RPI compact models [7][8][9], our approach sequentially optimizes the model parameters in the regions of linear, subthreshold, saturation, and leakage. For a set of given measured data, extraction of…”

Section: Introductionmentioning

confidence: 99%

A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors

2004

J Comput Electron

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“…A thermal model that describes the relation between the power dissipation and the junction temperature is adopted. The electrical model of HBT considered in our simulation is based on the Gummel-Poon (GP) large signal model [7], [8], [9], [10]. For the thermal-electrical feedback mechanism, the temperature-dependant equations are introduced to the GP model …”

Section: Self-heating Modeling and Numerical Methodsmentioning

confidence: 99%

“…Using the waveform relaxation (WR), the monotone iterative (MI), and Runge-Kutta methods [7], [8], [9], [10], a set of nonlinear ordinary differential equations (ODEs) with thermal models is solved numerically in the time domain. The governing ODEs of the equivalent circuit of HBTs are formulated by the Kirchhoff's current law [11].…”

Section: Introductionmentioning

confidence: 99%

“…The governing ODEs of the equivalent circuit of HBTs are formulated by the Kirchhoff's current law [11]. This solution technique has recently been developed by us for circuit simulations [7], [8], [9], [10]. The temperature-dependent physical quantities are modeled and several important engineering factors, such as the power-added efficiency and the 1-dB compression point of the simulated three-finger HBT are calculated.…”

Section: Introductionmentioning

confidence: 99%

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Numerical Simulation of Self-heating InGaP/GaAs Heterojunction Bipolar Transistors

Huang

2005

Lecture Notes in Computer Science

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Abstract.We numerically simulate effects of the self-heating on the current-voltage characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs). A set of coupled nonlinear ordinary differential equations (ODEs) of the equivalent circuit of HBT is formed and solved numerically in the large-signal time domain. We decouple the corresponding ODEs using the waveform relaxation method and solve them with the monotone iterative method. The temperature-dependent energy band gap, the current gain, the saturation current, and the thermal conductivity are considered in the model formulation. The power-added efficiency and the 1-dB compression point of a three-finger HBT are calculated. This approach successfully explores the self-heating and the thermal coupling phenomena of the three-finger transistors under high power and high frequency conditions. The numerical algorithm reported here can be incorporated into electronic computer-aided design software to simulate ultra-large scale integrated and radio frequency circuits.

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A Hybrid Intelligent Computational Methodology for Semiconductor Device Equivalent Circuit Model Parameter Extraction

2006

Scientific Computing in Electrical Engineering

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A Genetic Algorithm Approach to InGaP/GaAs HBT Parameters Extraction and RF Characterization

Cited by 7 publications

References 0 publications

A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors

A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors

Numerical Simulation of Self-heating InGaP/GaAs Heterojunction Bipolar Transistors

A Hybrid Intelligent Computational Methodology for Semiconductor Device Equivalent Circuit Model Parameter Extraction

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