A generic “micro-Stoney” method for the measurement of internal stress and elastic modulus of ultrathin films

Favache, Audrey; Ryelandt, Sophie; Melchior, Maxime; Zeb, Gul; Carbonnelle, Pierre; Raskin, Jean‐Pierre; Pardoen, Thomas

doi:10.1063/1.4939912

Cited by 9 publications

(12 citation statements)

References 59 publications

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“…The mechanisms behind the self‐assembly of strained thin film bi‐ and multilayers are covered in several recent reviews, including the works of Zhang et al and Chen et al The residual strain approach has been extensively explored in studying material properties and the fundamental geometrically induced optical, magnetic, and biological effects. These development have been accompanied in recent years by the appearance of novel 3D mesoscopic electronic devices including sensors, passive electronic components, thermoelectric generators, electrochemical cells, transistors, and 3D electrodes …”

Section: Self‐assembly Driving Mechanisms and Materials Platformsmentioning

confidence: 99%

Shapeable Material Technologies for 3D Self‐Assembly of Mesoscale Electronics

Karnaushenko

Kang

Schmidt

2019

Adv Materials Technologies

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simple transistors and logics to highly integrated microcontrollers and displays, the latter of which utilizes some of the most technologically advanced processes available in the industry. [3] The success of these technologies has been achieved through enhanced integration of various active functional blocks such as transistors, digital logics, and analog circuits, along with advances in miniaturization and simplification of the overall manufacturing process, eventually leading to large scale, parallel fabrication of silicon chip-based microelectronic components and systems. [4,5] However, many of the manufacturing steps in assembling these electronic components remain either semiparallel or sequential in nature, including processes as dicing, pick and place, packaging, and final assembly of the device. Each additional sequential step increases costs and should ideally be avoided, however substantial streamlining is not always feasible in complex manufacturing processes. [6] More critically, highly integrated silicon-based devices still require several external supporting components for their operation such as wiring, powering, sensing, and communications that cannot be easily integrated within the planar surface of a silicon die. Thus, sensors, actuators, capacitors, coils, antennas, and optics, each crucial for the complete system, are typically placed separately from the silicon chip onto a printed circuit board (PCB), or integrated within another package (Figure 1a). While the need for ever decreasing sizes has demanded tremendous investments and efforts in the manufacture of completed assemblies, the miniaturizing of 3D electronic components (Figure 1b) and systems has nevertheless reached the range of mesoscopic sizes (<1 mm) where the manufacture and assembly of components experience challenges with respect to yield, costs, and reliability. [7] As a result, these issues limit the fabrication potential and commercial viability of components and systems to scales around 1 mm, [8] and despite efforts to improve the planar construction of mesoscopic 3D devices, the results are seen as inefficient and experience difficulties in achieving high performances while maintaining reasonable complexity. Despite the great success in manufacturing active electronics, such concerns are strongly related to the fabrication of passive electronic components like inductors, capacitors, antennas, and resonators where material properties (e.g., mechanical, magnetic, and electrical) and geometry play a crucial role. [8,9] In order to downscale these devices further and improve integration with active electronics, novel fabrication strategies are required.Electronic devices and their components are continually evolving to offer improved performance, smaller sizes, lower weight, and reduced costs, often requiring the state-of-the-art manufacturing and materials to do so. An emerging class of materials and fabrication techniques inspired by self-assembling biological systems shows promise as an alternative to the more traditional m...

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Section: Self‐assembly Driving Mechanisms and Materials Platformsmentioning

confidence: 99%

Shapeable Material Technologies for 3D Self‐Assembly of Mesoscale Electronics

Karnaushenko

Kang

Schmidt

2019

Adv Materials Technologies

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“…This expression is the generalization of the Stoney formula for uniform mismatch strain in the tested film [24]. It was used in the aforementioned bilayer cantilever-based methods to extract the Young modulus of ultrathin films [16,17]. However, Equation ( 21) can be only used in the cases where the contribution of the intrinsic stress gradients to the internal bending moment is very small compared to that from the uniform stress components.…”

Section: Solution and Simplification Proceduresmentioning

confidence: 99%

“…The evolution of the normalized curvature (k * ) with respect the normalized internal bending moment (M * ) in each cantilever is shown in Figure 4. The expressions for k * and M * are derived following the normalization procedure proposed in previous report [16]:…”

Section: Accuracy Of the Proposed Modelsmentioning

confidence: 99%

“…Our proposal is motivated by the large curvature variations of fully released cantilevers, resulting in increased sensitivity to tested film characteristics. However, we consider wafer-level measurement of residual stresses in both the reference layer and the tested film in comparison to the investigations reported in previous reports [16,17]. The in-situ measurement of these residual stresses allows the characterization of the elastic mismatch strain.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the accuracy of the strain measurement requires long beams that can suffer from stiction in the release steps. Recently, the deflections of residual stress-driven bilayer cantilevers integrated by a tested film and a well-characterized reference layer have been used to study the elastic properties of ultrathin films [16,17]. In these cases, the parameters that are evaluated are both Young's modulus and mismatch strain of the tested film.…”

Section: Introductionmentioning

confidence: 99%

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Estimation of the Young’s Modulus of Nanometer-Thick Films Using Residual Stress-Driven Bilayer Cantilevers

et al. 2022

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Precise prediction of mechanical behavior of thin films at the nanoscale requires techniques that consider size effects and fabrication-related issues. Here, we propose a test methodology to estimate the Young’s modulus of nanometer-thick films using micromachined bilayer cantilevers. The bilayer cantilevers which comprise a well-known reference layer and a tested film deflect due to the relief of the residual stresses generated during the fabrication process. The mechanical relationship between the measured residual stresses and the corresponding deflections was used to characterize the tested film. Residual stresses and deflections were related using analytical and finite element models that consider intrinsic stress gradients and the use of adherence layers. The proposed methodology was applied to low pressure chemical vapor deposited silicon nitride tested films with thicknesses ranging from 46 nm to 288 nm. The estimated Young’s modulus values varying between 213.9 GPa and 288.3 GPa were consistent with nanoindentation and alternative residual stress-driven techniques. In addition, the dependence of the results on the thickness and the intrinsic stress gradient of the materials was confirmed. The proposed methodology is simple and can be used to characterize diverse materials deposited under different fabrication conditions.

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