Abstract:A generic optimization methodology is presented for the design of drift region in lateral silicon‐on‐insulator (SOI) power devices. The methodology targets a drift region design with a low on resistance and a high reverse blocking capability. 2D drift diffusion technology computer aided design (TCAD) simulations are used to arrive at the principles of operation. As the drift region is a critical component of any lateral power device, the simulation domain is isolated to a generic n‐doped Si drift region, with … Show more
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