A generation of 2 μm Q-switched thulium-doped fibre laser based on anatase titanium(IV) oxide film saturable absorber

Latiff, Anas Abdul; Rusdi, Muhammad Farid Mohd; Hisyam, Mohamad Badrol; Ahmad, Harith; Harun, Sulaiman Wadi

doi:10.1080/09500340.2016.1220641

Cited by 30 publications

(10 citation statements)

References 11 publications

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“…Figure 5 shows the repetition rate and the pulse width versus the pump power. The repetition rate of the BP based Q-switched YDFL has a monotonically increasing, near-linear relationship with the pump power level, which is consistent with another Q-switched fiber laser [9,10]. When the pump power is tuned from 7.2 to 42.3mW, the pulse train repetition rate varies from 9.61 to 44.72kHz.…”

Section: Q-switched Erbium-doped Fiber Laser With a Black Phosphorus supporting

confidence: 81%

Q-switched Erbium-doped Fiber Laser with a Black Phosphorus Saturable Absorber

et al. 2017

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A passively Q-switched Erbium-doped fiber laser (EDFL) is demonstrated using a black phosphorus saturable absorber as the Q-switcher. The laser generates a stable pulse operating at a wavelength of 1562.35 nm within a pump power region from 7.2 mW to 42.3 mW. At 980 nm pump power of 42.3 mW, the EDFL generates an optical pulse train with a repetition rate of 44.72 kHz and pulse width of 9.8 us. The maximum pulse energy of 81.5 nJ is obtained at a pump power of 35.2 mW. A higher performance Q-switched EDFL is expected to be achieved with the optimization of the saturable absorber and laser cavity. Full Text: PDF ReferencesR. Mas-Balleste, C. Gomez-Navarro, J. Gomez-Herrero and F. Zamora, "2D materials: to graphene and beyond", Nanoscale 3, 20 (2011). CrossRef Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko and A. C. Ferrari, "Graphene Mode-Locked Ultrafast Laser", ACS nano 4, 803 (2010) CrossRef F. Xia, H. Wang and Y. Jia, "Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.", Nat Commun 5 (2014). CrossRef G. Sobon, "Mode-locking of fiber lasers using novel two-dimensional nanomaterials: graphene and topological insulators [Invited]", Photonics Research 3, A56 (2015). CrossRef Y. Chen, G. Jiang, S. Chen, Z. Guo, X. Yu, C. Zhao, H. Zhang, Q. Bao, S. Wen and D. Tang, "Mechanically exfoliated black phosphorus as a new saturable absorber for both Q-switching and Mode-locking laser operation", Optics express 23, 12823 (2015). CrossRef M. Hisyam, M. Rusdi, A. Latiff and S. Harun, "Generation of Mode-Locked Ytterbium Doped Fiber Ring Laser Using Few-Layer Black Phosphorus as a Saturable Absorber", IEEE Journal of Selected Topics in Quantum Electronics 23, 39 (2017). CrossRef S. Sugai and I. Shirotani, "Raman and infrared reflection spectroscopy in black phosphorus", Solid state communications 53, 753 (1985). CrossRef Z.-C. Luo, M. Liu, Z.-N. Guo, X.-F. Jiang, A.-P. Luo, C.-J. Zhao, X.-F. Yu, W.-C. Xu and H. Zhang, "Microfiber-based few-layer black phosphorus saturable absorber for ultra-fast fiber laser", Optics express 23, 20030 (2015). CrossRef A. Latiff, M. Rusdi, M. Hisyam, H. Ahmad and S. Harun, "A generation of 2 um Q-switched thulium-doped fibre laser based on anatase titanium(IV) oxide film saturable absorber", Journal of Modern Optics 64, 187 (2017). CrossRef J. Bogusławski, G. Soboń, K. Tarnowski, R. Zybała, K. Mars, A. Mikuła, K. M. Abramski and J. Sotor, "All-polarization-maintaining-fiber laser Q-switched by evanescent field interaction with Sb2Te3 saturable absorber", Optical Engineering 55, 081316 (2016). CrossRef Z. Wang, Y. Xu, S. C. Dhanabalan, J. Sophia, C. Zhao, C. Xu, Y. Xiang, J. Li, and H. Zhang, "Black Phosphorus Quantum Dots as an Efficient Saturable Absorber for Bound Soliton Operation in an Erbium Doped Fiber Laser," IEEE Photonics Journal 8, 1 (2016). CrossRef

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Section: Q-switched Erbium-doped Fiber Laser With a Black Phosphorus supporting

confidence: 81%

Q-switched Erbium-doped Fiber Laser with a Black Phosphorus Saturable Absorber

et al. 2017

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“…The Q switched pulse energy demonstrated here is ~20 dB higher and the slope e ciency is ~ 40% as compared to 1% in the previous demonstration [29]. More importantly, the slope e ciency is higher, and the pulse energy is comparable or in many cases higher than many benchtop Q-switched all-ber lasers using true saturable absorbers [47][48][49][50][51][52][53][54][55]. Moreover, pulses with high peak power and short pulsewidth can be achieved (by thermally tuning the saturable absorber), provided that we operate within the optical damage threshold of the SiN waveguide as one can reach intracavity pulse energy close to the damage threshold of SiN waveguides with nanosecond pulses [56-58].…”

Section: Introductionmentioning

confidence: 80%

“…Passive Q-switching on the other hand, requires a saturable absorber whose loss drops with pulse intensity, which is a cost effective, compact and robust technique. For this reason, there is a strong desire in the ber community to develop passively Q-switched high energy lasers, and several groups have tried different types of saturable absorbers over the past decade that are durable, inexpensive, have a high damage threshold, and require little space [47][48][49][50][51][52][53][54][55][59][60][61][62][63].…”

Section: Introductionmentioning

confidence: 99%

Chip-scale, CMOS-compatible, high energy passively Q-switched laser

Singh

Lorenzen

Sinobad

et al. 2023

Preprint

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Chip-scale, high-energy optical pulse generation is becoming increasingly important as we expand activities into hard to reach areas such as space and deep ocean. Q-switching of the laser cavity is the best known technique for generating high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fiber lasers, especially in the long wavelength range >1.8 µm, thanks to their large energy storage capacity. However, in integrated photonics, the very property of tight mode confinement, that enables a small form factor, becomes an impediment to high energy application due to small optical mode cross-section. In this work, we demonstrate complementary metal-oxide-semiconductor (CMOS) compatible, rare-earth gain based large mode area (LMA) passively Q-switched laser in a compact footprint. We demonstrate high on-chip output pulse energy of >150 nJ in single transverse fundamental mode in the eye-safe window (1.9 µm), with a slope efficiency ~ 40% in a footprint of ~9 mm2. The high energy pulse generation demonstrated in this work is comparable or in many cases exceeds Q-switched fiber lasers. This bodes well for field applications in medicine and space.

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“…[7,8] Despite having a zero bandgap that enables a broad operation spectrum, graphene eventually has a very low modulation depth (typically <1% per layer). [9,10] The discovery for better 2D materials leads to transition metal dichalcogenides (TMDs) [11] and black phosphorus (BP). [12,13] However, due to the large bandgap of TMDs, it is difficult to operate in the infrared region that requires low bandgap SAs.…”

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confidence: 99%

Q-Switched Erbium-Doped Fiber Laser Using Cadmium Selenide Coated onto Side-Polished D-Shape Fiber as Saturable Absorber

Rusdi¹,

Mahyuddin²,

Latiff³

et al. 2018

Chinese Phys. Lett.

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A stable Q-switched erbium doped fiber laser emitting at 1558 nm is demonstrated using a cadmium selenide (CdSe) material coated onto a side-polished D-shape fiber as the saturable absorber (SA). By elevating the input pump power from the threshold of 91 mW to the maximum available power of 136 mW, a pulse train with a maximum repetition rate of 57.44 kHz, minimum pulse width of 3.76 μs, maximum average output power of 7.99 mW, maximum pulse energy of 0.1391 μJ, and maximum peak power of 36.99 mW are obtained. The signal-to-noise ratio of the spectrum is measured to be around 75 dB. This CdSe based SA is simple, robust, and reliable, and thus suitable for making a portable pulse laser source.

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A generation of 2 μm Q-switched thulium-doped fibre laser based on anatase titanium(IV) oxide film saturable absorber

Cited by 30 publications

References 11 publications

Q-switched Erbium-doped Fiber Laser with a Black Phosphorus Saturable Absorber

Q-switched Erbium-doped Fiber Laser with a Black Phosphorus Saturable Absorber

Chip-scale, CMOS-compatible, high energy passively Q-switched laser

Q-Switched Erbium-Doped Fiber Laser Using Cadmium Selenide Coated onto Side-Polished D-Shape Fiber as Saturable Absorber

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