A generalized simulation method for MITATT-mode operation and studies on the influence of tunnel current on IMPATT properties

Abstract

A generalized method of DC and high-frequency analysis lor microwave transit time diodes in mixed tunnelling and avalanche mode, which can be applied to any type of diode Structure is reported. Taking a purely field-dependent tunnel generation rate for electrons, the same is computed lor holes from a simulated energy band diagram within the depletion layer of the diode. The method has been applied to a variety of Si, GaAs and InP diode structures. The results show a substantial degradation of IMPATT properties due lo phase distortion caused bv the tunnelling current.

Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

“…The microwave behaviours of the diodes are analysed for mixed mode operation. For the DC simulation we have followed the scheme described in [10]. It involves simultaneous solution of Poisson's equation, carrier continuity equation, and space charge equation.…”

“…A small-signal method of analysis including tunnelling current to the conduction current and displacement current developed by Dash and Pati [10] is used for our study. In essence it solves two simultaneous second-order differential equations on the real and imaginary parts of the resistivity ( ( , ), ( , )) at any point in the diode active layer, subject to the essential boundary conditions employing a double iterative computer simulation method which performs iterations over the initial values (0, ) and (0, ) since they are not known.…”

High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

“…The schematic of the MITATT diode considered is shown in Figure 1. The diodes are first designed following a MITATT mode DC simulation scheme de- veloped by Dash et al [14]. The DC analysis also fixes the edges of the diode active layer and determines the DC electric field and carrier current profiles.…”

“…The tunnelling generation rate for holes is computed using a simulated energy band diagram [14]. The values of constants T A and T B are taken from [15].…”

“…The values of constants T A and T B are taken from [15]. The high frequency analysis of the diode is carried out using a small signal simulation method described in [14]. The noise behaviour of MITATT device is computed using MITATT mode noise simulation scheme developed by Dash et al [16].…”